Thickness‐Dependent Band Gap and Atomic Structure in Elemental Tellurium Films

Yuting Sun,Tamihiro Gotoh,Bowen Li,Huanglong Li,Min Zhu

DOI: https://doi.org/10.1002/pssr.202300414

2024-02-16

physica status solidi (RRL) - Rapid Research Letters

Abstract:Elemental tellurium electrical switch, relying on a transient crystal‐liquid‐crystal phase transition, has recently been proposed as a promising selector candidate for the next‐generation 3D high‐density memory, bridging performance gap in today's computer. Further miniaturization of the switch cell to increase memory density strongly depends on the scalability of the tellurium film, which, however, has not been experimentally studied. Here, we prepared the tellurium films with the thickness downscaled from 400 nm to 2 nm and found a significant increase in the band gap from 0.29 eV to 0.91 eV, as predicted by ab‐initio molecular dynamics. Interestingly, the as‐deposited tellurium films with a thickness above 3 nm were in the crystalline trigonal phase, whereas 2 nm‐thick films suddenly became amorphous, observed by both Raman and transmission electron microscopy. Since the leakage current of the elemental tellurium switch is determined by both the Schottky barrier between tellurium/electrode interface and the band gap of the tellurium film, this finding predicts a reduction in leakage current with further miniaturization. This article is protected by copyright. All rights reserved.

physics, condensed matter, applied,materials science, multidisciplinary