Abstract:Metallic transition metal dichalcogenides (TMDs), consisting of H-NbSe$_2$, H-NbS$_2$, H-TaSe$_2$ and H-TaS$_2$, remain superconducting down to a thickness of a single layer. In these materials, thickness affects a variety of properties, including Ising protection, two-band superconductivity, and the critical temperature $T_C$, which decreases for the Nb-based, and increases for the Ta-based materials. This contradicting trend is puzzling, and has precluded the development of a unified theory. We approach the question of thickness-evolution of $T_C$ and the superconducting gap $\Delta$ by measuring high-resolution tunneling spectra in TaS$_2$-based stacked devices. Our measurements allow for simultaneous evaluation of $\Delta$, $T_C$, and the upper critical field $H_{C2}$. The latter, we find, is strongly enhanced towards the single-layer limit, following a $H_{C2} \propto \Delta^2$ proportionality ratio. Our main finding is that the same ratio holds for the entire family of metallic TMDs: TaS$_2$ and NbSe$_2$ of all thicknesses, bulk TaSe$_2$ and bulk NbS$_2$, extending over 4 orders of magnitude in $H_{C2}$ and covering both clean and dirty limits. We propose that this tunability across the TMD family is controlled by the competing charge density wave (CDW) phase. Using Gor'kov's theory, we calculate how a CDW order affects the quasiparticle density of states and the resulting $T_C$ and $H_{C2}$. Our results suggest that CDW is the key determinant factor limiting $T_C$ in the TMD family. They also show that $H_{C2}$ is universally enhanced by a factor of two orders of magnitude above the expected value, an effect that remains an open question.

Thickness-dependent Anisotropic Superconductivity and Charge Density Wave in ZrTe3 Down to the Two-Dimensional Limit

Thickness-dependent Electronic Structure in Layered ZrTe5 Down to the Two-Dimensional Limit

Thickness-tuned Transition of Band Topology in ZrTe5 Nanosheets

Superconductivity and Charge Density Wave in ZrTe3−xSex

Semiconductor–Metal Phase Transition and Emergent Charge Density Waves in 1 T -ZrX 2 (X = Se, Te) at the Two-Dimensional Limit

Electrical Transport in Nano-Thick ZrTe_5 Sheets: from Three to Two Dimensions

Semiconductor-metal phase transition and emergent charge density waves in 1T-ZrX$_2$ (X = Se, Te) at the two-dimensional limit

Detailed Electronic Structure of the Three-Dimensional Fermi Surface and its Sensitivity to Charge Density Wave Transition in ZrTe3 Revealed by High Resolution Laser-Based Angle-Resolved Photoemission Spectroscopy

Distinct Fingerprints of Charge Density Waves and Electronic Standing Waves in ZrTe_3

Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1T-Zrx2 (X = Se, Te) at the Two-Dimensional Limit.

Anisotropic Gapping of Topological Weyl Rings in the Charge-Density-wave Superconductor InxTaSe2

Thermal transport and mixed valence in ZrTe 3 doped with Hf and Se

Thermal transport and mixed valence in ZrTe$_3$ doped with Hf and Se

Distinction Between Pristine and Disorder-Perturbed Charge Density Waves in ZrTe3

The transition-metal-dichalcogenide family as a superconductor tuned by charge density wave strength

Subtle effect of doping on the charge density wave in Ta Te 2 − δ ( δ = 0.028 – 0.123 ) crystals revealed by anisotropic transport measurements and Raman spectroscopy

Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride

Subtle effect of doping on the charge density wave in TaTe<sub>2-</sub> (=0.028-0.123) crystals revealed by anisotropic transport measurements and Raman spectroscopy

Thermal Dynamics of Charge Density Wave Pinning in ZrTe 3

Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5

Unveiling the phases of bulk ZrTe 5 through magnetotransport phenomena