Electrical Transport in Nano-Thick ZrTe_5 Sheets: from Three to Two Dimensions

Jingjing Niu,Jingyue Wang,Zhijie He,Chenglong Zhang,Xinqi Li,Tuocheng Cai,Xiumei Ma,Shuang Jia,Dapeng Yu,Xiaosong Wu
DOI: https://doi.org/10.1103/physrevb.95.035420
2017-01-01
Abstract:ZrTe_5 is a newly discovered topological material. Shortly after a single layer ZrTe_5 had been predicted to be a two-dimensional topological insulator, a handful of experiments have been carried out on bulk ZrTe_5 crystals, which however suggest that its bulk form may be a three-dimensional topological Dirac semimetal. We report the first transport study on ultra thin ZrTe_5 flakes down to 10 nm. A significant modulation of the characteristic resistivity maximum in the temperature dependence by thickness has been observed. Remarkably, the metallic behavior, occurring only below about 150 K in bulk, persists to over 320 K for flakes less than 20 nm thick. Furthermore, the resistivity maximum can be greatly tuned by ionic gating. Combined with the Hall resistance, we identify contributions from a semiconducting and a semimetallic bands. The enhancement of the metallic state in thin flakes are consequence of shifting of the energy bands. Our results suggest that the band structure sensitively depends on the film thickness, which may explain the divergent experimental observations on bulk materials.
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