Thickness-dependent Electronic Structure in Layered ZrTe5 Down to the Two-Dimensional Limit

W. Z. Zhuo,B. Lei,C. S. Zhu,Z. L. Sun,J. H. Cui,W. X. Wang,Z. Y. Wang,T. Wu,J. J. Ying,Z. J. Xiang,X. H. Chen
DOI: https://doi.org/10.1103/physrevb.106.085428
2022-01-01
Abstract:Zirconium pentatelluride (ZrTe5) has recently attracted intense research interest, mainly due to its potential topological nontriviality and the extraordinary quantum phenomena it displays. As an exemplary layered compound, ZrTe5 is expected to exhibit thickness-sensitive physical properties that vary with thinning towards the two-dimensional (2D) limit, which has not been thoroughly investigated yet. In this work, we successfully prepare sizable ZrTe5 thin flakes down to the monolayer for the first time. By examining the evolution of magnetotransport properties and the Shubnikov-de Haas effect in ZrTe5 flakes with various layer numbers, we reveal a pronounced thickness dependence of the electronic structure of ZrTe5 characterized by a downward shift of the Fermi level as large as similar to 160 meV upon thickness reduction from bulk to two-unit cells (four atomic layers). Furthermore, an external electric field effectively modifies the magnetoresistance and quantum oscillation frequency in the few-layered ZrTe5. Our study proves that ZrTe5 thin flake can be an excellent platform for exploring the novel properties proposed for 2D topological materials as well as their tunability.
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