Abstract:With excellent physical and chemical properties, 2D TMDC materials have been widely used in engineering applications, but they inevitably suffer from the dual effects of strain and device size. As typical 2D TMDCs, HfSe2 and ZrS2 are reported to have excellent thermoelectric properties. Thermal transport properties have great significance for exerting the performance of materials, ensuring device lifetime and stable operation, but current research is not detailed enough. Here, first-principles combined with the phonon Boltzmann transport equation are used to study the phonon transport inside monolayer HfSe2 and ZrS2 under tensile strain and finite size, and explore the band structure properties. Our research shows that they have similar phonon dispersion curve structures, and the band gap of HfSe2 increases monotonically with the increase of tensile strain, while the bandgap of ZrS2 increases and then decreases with the increase of tensile strain. Thermal conductivity has obvious strain dependence: with the increase of tensile strain, the thermal conductivity of HfSe2 gradually decreases, while that of ZrS2 increases slightly, and then gradually decreases. Reducing the system size can limit the contribution of phonons with a long mean free path, significantly decreasing thermal conductivity through the controlling effect of tensile strain. The mode contribution of thermal conductivity is systematically investigated, and anharmonic properties including mode and frequency-level scattering rates, group velocity and Grüneisen parameters are used to explain the associated mechanism. Phonon scattering processes and channels in various cases are discussed in detail. Our research provides a detailed understanding of the phonon transport and electronic structural properties of low thermal conductivity monolayers of HfSe2 and ZrS2, and further completes the study of thermal transport of the two materials under strain and size tuning, which will provide a foundation for further popularization and application.

Thermal transport and mixed valence in ZrTe$_3$ doped with Hf and Se

Thermal transport and mixed valence in ZrTe 3 doped with Hf and Se

Thermal Transport and Mixed Valence in ZrTe_3 Doped with Hf and Se

Anisotropic Lattice Thermal Conductivity In Topological Semimetal Zrgex (X = S, Se, Te): A First-Principles Study

Superconductivity and Charge Density Wave in ZrTe3−xSex

Enhanced Superconductivity and Electron Correlations in Intercalated ZrTe3

Effect of Te Doping on Superconductivity and Charge-Density Wave in Dichalcogenides 2H-Nbse2-xtex (X=0, 0.1, 0.2)

Tensile strain and finite size modulation of low lattice thermal conductivity in monolayer TMDCs (HfSe2 and ZrS2) from first-principles: a comparative study

Transition from Semimetal to Semiconductor in ZrTe2 Induced by Se Substitution

Te Substitution Effect in Low-Dimensional Superconductor NbSe<sub>2-x</sub>Te<sub>x</sub> (x = 0, 0.1, 0.2)

Charge density wave and superconductivity in the family of telluride chalcogenides Zn1-xCuxIr2-yN(N = Al, Ti, Rh)yTe4

Superconductivity in Te-Deficient ZrTe2

First-principles Study of Lattice Thermal Conductivity in ZrTe5 and HfTe5

Electrical, magneto-transport and significant thermoelectric properties of Te-rich ZrTe5+δ polycrystals

Anisotropic Multichain Nature And Filamentary Superconductivity In The Charge Density Wave System Hfte3

Semiconductor-metal phase transition and emergent charge density waves in 1T-ZrX$_2$ (X = Se, Te) at the two-dimensional limit

Effect of Te Doping on the Structure and Superconductivity of K X Fe 2− Y Se 2− Z Te Z Single Crystals

Thickness-dependent Anisotropic Superconductivity and Charge Density Wave in ZrTe3 Down to the Two-Dimensional Limit

Excitation Spectrum in Ni- and Cu-Doped Zrte3

Electronic Structures of Cr-Intercalated ZrTe<sub>2</sub> Revealed by Angle-Resolved Photoemission Spectroscopy

Subtle effect of doping on the charge density wave in TaTe<sub>2-</sub> (=0.028-0.123) crystals revealed by anisotropic transport measurements and Raman spectroscopy