Abstract:Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, <math> α</math> and <math> γ</math>) and one at high temperature (crystalline, <math> β</math>). Because transitions between the amorphous and crystalline states lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been investigated as a phase-change material for photonics, thermoelectrics, ferroelectrics, and spintronics. Consequently, the temperature-dependent phase transitions in GeTe have been studied for bulk and thin-film GeTe, both fabricated by sputtering. Colloidal synthesis of nanoparticles offers a more flexible fabrication approach for amorphous and crystalline GeTe. These nanoparticles are known to exhibit size-dependent properties, such as an increased crystallization temperature for the amorphous-to-<math> α</math> transition in sub-10 nm GeTe particles. The <math> α</math>-to-<math> β</math> phase transition is also expected to vary with size, but this effect has not yet been investigated for GeTe. Here, we report time-resolved x-ray diffraction of GeTe nanoparticles with different diameters and from different synthetic protocols. We observe a non-volatile amorphous-to-<math> α</math> transition between 210 <math> °</math>C and 240 <math> °</math>C and a volatile <math> α</math>-to-<math> β</math> transition between 370 <math> °</math>C and 420 <math> °</math>C. The latter transition was reversible and repeatable. While the transition temperatures are shifted relative to the values known for bulk GeTe, the nanoparticle-based samples still exhibit the same structural phases reported for sputtered GeTe. Thus, colloidal GeTe maintains the same general phase behavior as bulk GeTe while allowing for more flexible and accessible fabrication. Therefore, nanoparticle-based GeTe films show great potential for applications such as in active photonics.

Spectrally-resolved dielectric function of amorphous and crystalline GeTe nanoparticle thin films

Phase transitions in germanium telluride nanoparticle phase-change materials studied by temperature-resolved x-ray diffraction

Phase Transitions in Germanium Telluride Nanoparticle Phase-Change Materials Studied by Time-Resolved X-Ray Diffraction

Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu-Ge-Te Nanoparticles

Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

Thickness Dependence and Crystallization Properties of Amorphous GeTe Thin Films on Silicon Dioxide

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Application of phase change material in tunable optical filters and shutters

Phase-Change Characteristics and Thermal Stability of GeTe/Sb<sub>2</sub>Te<sub>3</sub>Nanocomposite Multilayer Films

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Crystallization Characteristic And Scaling Behavior Of Germanium Antimony Thin Films For Phase Change Memory

Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation.

GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation

Broadband and ultrafast terahertz modulation with GeTe thin films

Nanocrystalline formation and optical properties of germanium thin films prepared by physical vapor deposition

A remarkable match of optical response in the amorphous-crystalline and zinc blende-rock salt phase pairs of GeTe

Tunable colorimetric thin-film structures based on phase change materials

“All-Crystalline” Phase Transition in Nonmetal Doped Germanium–antimony–tellurium Films for High-Temperature Non-Volatile Photonic Applications