Abstract:Single‐layer graphene microheaters are used to electro‐thermally switch the optical phase‐change material Ge2Sb2Se4Te1, with powers down to 8.6 mW. Nonvolatile tunable integrated photonic modulators and reconfigurable 2π phase‐modulation metasurfaces are proposed using 3D simulations and experimental data. This framework enables scalable nonvolatile photonic devices with microheaters that are compatible to all photonic platforms and do not disrupt their optical performances.Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real‐world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcome these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on‐chip integration with different photonic platforms and do not disrupt their optical performances. Herein, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that uses undoped‐graphene microheaters to thermally and reversibly switch the optical phase‐change material Ge2Sb2Se4Te1 (GSST). An in situ Raman spectroscopy method is utilized to demonstrate, in real‐time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si3N4 integrated photonic circuits with small form‐factor modulators and reconfigurable metasurfaces displaying 2π phase coverage through neural‐network‐designed GSST meta‐atoms. This framework will enable scalable, low‐loss nonvolatile applications across a diverse range of photonics platforms.

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Reversible Thermally Driven Phase Change of Layered In 2 Se 3 for Integrated Photonics

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Modulation of opto-electronic properties of InSe thin layers via phase transformation

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Substrate-induced phase control of In2Se3 thin films

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Phase-change behavior in Si/Sb 80 Te 20 nanocomposite multilayer films

Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene

Reversible electrochromism in α-In2Se3 through ferroelectric switching induced phase transition

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Multi‐Level Electro‐Thermal Switching of Optical Phase‐Change Materials Using Graphene

Melting-free integrated photonic memory with layered polymorphs

Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor

Optical switching beyond a million cycles of low-loss phase change material Sb$_2$Se$_3$

Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets.

Thermal dynamics of phase switching process of an SOI rib waveguide covered with a Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase change material film

Structural and Electronic Response of Multigap N-Doped In2Se3: A Prototypical Material for Broad Spectral Optical Devices