Abstract:Chalcogenide alloys in pseudobinary line between Sb2Te3 and GeTe are extensively utilied in phase change memories for optical and electronic contrast between crystalline and amorphous phases. Different from the crystalline structure, the understanding of amorphous structures is still insufficient due to disorder and distortion. By employing first-principle molecular dynamics simulations and atomistic cluster alignment analysis, the short-range orders and the associated distortions of amorphous Sb2Te3, Ge1Sb2Te4, Ge2Sb2Te5, Ge3Sb2Te6 and GeTe are investigated to explore the origin of nature difference. The results reveal that GeGe and SbSb bonds present a notable competitive mechanism with GeTe content. The GeTe content has a great influence on Ge- and Te-centered short-range orders but little influence on the structures of Sb-centered clusters, especially for the octahedral sites and unidentified structures. The tetrahedrons in Ge-centered clusters of each alloy show a close proportion, but the fraction of tetrahedrons in total clusters increases with the increasing GeTe content due to the increase in the ratio of Ge atom. As for the distortions of clusters, the distorted tetrahedrons in Ge2Sb2Te5 are closest to the standard tetrahedron, the Peierls distortion of Ge-centered 6-fold octahedron reduces with an increase in GeTe content whereas that of Sb-centered 6-fold octahedron shows a little change. Additionally, it is found that GeTe content can inhibit the formation of nanocavity but contribute to the formation of the odd rings. Our findings deepens the understanding of amorphous structures, which can promote the design and application of phase-change materials.

Nature of electrical resistivity and structural stability in N‐doped GeTe models for reliable phase‐change materials

Dependence Of The Properties Of Phase Change Random Access Memory On Nitrogen Doping Concentration In Ge2sb2te5

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Fermi-level Pinning and Charge Neutrality Level in Nitrogen-Doped Ge2Sb2Te5: Characterization and Application in Phase Change Memory Devices

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Origin of the concentration-dependent effects of N on the stability and electrical resistivity in polycrystalline Ge 1 Sb 2 Te 4

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in Situ Resistance Measurements

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Effects of Thickness and Si 3 N 4 Coverage on the Phase Transition Characteristics of GeTe Thin Films

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallization

Anomalous lattice thermal conductivity increase with temperature in cubic GeTe correlated with strengthening of second-nearest neighbor bonds

The Role of Ge Vacancies and Sb Doping in GeTe: A Comparative Study of Thermoelectric Transport Properties in SbxGe1-1.5xTe and SbxGe1-xTe Compounds

A neural network interatomic potential for the phase change material GeTe

Pressure-induced reversible structural phase transitions and metallization in GeTe under hydrostatic and non-hydrostatic environments up to 22.9 GPa

Insight into the Role of Oxygen in Phase-Change Material GeTe

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Structural Evolution and Thermoelectric Performance in (gete)m(sb2te3)n Compounds

The local structural differences in amorphous Ge-Sb-Te alloys