Abstract:Anisotropic thermoelectric properties are studied in Ge1‐xInxSb2Te4 single crystals. The impurity band introduced by In‐doping enhances the Seebeck coefficient, while the strong anharmonicity caused by the weak chemical bonding and the mixed occupancy of Ge/Sb atoms on cation sites leads to low lattice thermal conductivity. Finally, zTmax and zTave of 1 and 0.68 are obtained along c‐axis. Layer‐structured GeSb2Te4 is a promising thermoelectric candidate, while its anisotropy of thermal and electrical transport properties is still not clear. In this study, Ge1–xInxSb2Te4 single crystals are grown by Bridgman method, and their anisotropic thermoelectric properties are systematically investigated. Lower electrical conductivity and higher Seebeck coefficient are observed in the c‐axis due to the higher effective mass in this direction. Intrinsically low lattice thermal conductivity is also observed in the c‐axis due to the weak chemical bonding and the strong lattice anharmonicity proved by density functional theory calculation. Indium doping introduces an impurity band in the bandgap of GeSb2Te4 and leads to the locally distorted density of states near the Fermi level, which contributes to enhanced Seebeck coefficient and improved power factor. Ultimately, a peak zT value of 1 at 673 K and an average zT value of 0.68 within 323–773 K are obtained in Ge0.93In0.07Sb2Te4 along the c‐axis direction, which are 54% and 79% higher than that of the pristine GeSb2Te4 single crystal, respectively. This work clarified the origin of intrinsic low lattice thermal conductivity and anisotropy transport properties in GeSb2Te4, and shed light on the performance optimization of other layered thermoelectric materials.

Origin of the concentration-dependent effects of N on the stability and electrical resistivity in polycrystalline Ge 1 Sb 2 Te 4

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Nature of electrical resistivity and structural stability in N‐doped GeTe models for reliable phase‐change materials

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

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Effects Of Surface Structure And Ag-Sb Nanodots On Electronic Properties Of Pbte (100) Facets From First-Principles Calculations

Impact of Various Dopants on Thermoelectric Transport Properties of Polycrystalline GeSb2Te4

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Study on the Crystallization by an Electrical Resistance Measurement in Ge2sb2te5 and N-Doped Ge2sb2te5 Films

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Thermal conductivity measurements of nitrogen-doped Ge2Sb2Te5

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Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

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Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb2Te4 Single Crystals