The influence of Mn-doping types on electronic structure and dilute magnetic property of Ca 2 Ge
Weifu Cen,Xin He,Songli Dai,Lin Lv,Bing Yao,Jiankai Ou,Ping Zhou,Yinye Yang,Zean Tian
DOI: https://doi.org/10.1016/j.physb.2024.416082
IF: 2.988
2024-05-11
Physica B Condensed Matter
Abstract:The dilute magnetic semiconductor (DMS) materials have important application prospects in the field of electronic science and technology. Ca 2 Ge is a new environmentally friendly semiconductor material. The structure characteristics indicate that the dilute magnetic properties can be achieved by doping, in the theory. There are C I , C II , C III , O I , O II and O III six doped types by Mn doping. For the C I , C II and O III , Ca 2 Ge is a semiconductor with a band gap of 0.21 eV, 0.21 eV and 0.065 eV, respectively; For the O II , Ca 2 Ge turns into a semi-metallic; For the C III and O I , Ca 2 Ge turns into a metal. Ca 2 Ge trans into ferromagnetism with Mn doped, the molecular magnetic moments of C I , C II , C III , O I , O II and O III are 5 μ B , 5 μ B , 1 μ B , 5 μ B , 5 μ B and 7 μ B , respectively. The results of the projected density of states (PDOS) indicated that the magnetism mainly comes from the Mn 3 d orbital spin, the orbital population shows that the spin of Mn atom affects the spin of Ca atom and the spin of Ge atom, the magnetic moment that is excited by Mn atom doping.
physics, condensed matter