Investigation of pressure effects on MnxGe1-xMnxGe1-x

X. L. Wang,M. Y. Ni,Z. Zeng,H. Q. Lin
DOI: https://doi.org/10.1016/j.jmmm.2009.03.045
IF: 3.097
2009-01-01
Journal of Magnetism and Magnetic Materials
Abstract:In the present work, the pressure effects on the electronic and magnetic properties of MnxGe1-x semiconductor have been investigated. The obtained results show that the lattice constant of MnxGe1-x increases with the Mn concentration increase. The magnetic moments of Mn ions decrease with increasing pressure. The interactions between Mn ions is a Ruderman–Kittel–Kasuya–Yosida like one over the whole pressure range applied. The role of the pressure actually increases the intensity of the interactions, and consequently the Curie temperature of Mn-doped Ge system increases with the pressure increase.
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