Abstract:Thermal transport properties bear a pivotal role in influencing the performance of phase change memory (PCM) devices, in which the PCM operation involves fast and reversible phase change between amorphous and crystalline phases. In this paper, we present a systematic experimental and theoretical study on the thermal conductivity of GeTe at high temperatures involving fast change from amorphous to crystalline phase upon heating. Modulated photothermal radiometry (MPTR) is used to experimentally determine thermal conductivity of GeTe at high temperatures in both amorphous and crystalline phases. Thermal boundary resistances are accurately taken into account for experimental consideration. To develop a concrete understanding of the underlying physical mechanism, rigorous and in-depth theoretical exercises are carried out. For this, first-principles density functional methods and linearized Boltzmann transport equations (LBTE) are employed using both direct and relaxation time based approach (RTA) and compared with that of the phenomenological Slack model. The amorphous phase experimental data has been described using the minimal thermal conductivity model with sufficient precision. The theoretical estimation involving direct solution and RTA method are found to retrieve well the trend of the experimental thermal conductivity for crystalline GeTe at high temperatures despite being slightly overestimated and underestimated, respectively, compared to the experimental data. A rough estimate of vacancy contribution has been found to modify the direct solution in such a way that it agrees excellently with the experiment. Umklapp scattering has been determined as the significant phonon-phonon scattering process. Umklapp scattering parameter has been identified for GeTe for the whole temperature range which can uniquely determine and compare Umklapp scattering processes for different materials

Thermal conductivity measurements of nitrogen-doped Ge2Sb2Te5

Study on the Crystallization by an Electrical Resistance Measurement in Ge2sb2te5 and N-Doped Ge2sb2te5 Films

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in Situ Resistance Measurements

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study

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Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

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Origin of the concentration-dependent effects of N on the stability and electrical resistivity in polycrystalline Ge 1 Sb 2 Te 4

Nitrogen-doped Ge 2 Sb 2 Te 5 films for nonvolatile memory

Ultrafast Temporal-Spatial Dynamics of Phase Transition in N-Doped Ge2Sb2Te5 Film Induced by Femtosecond Laser Pulse Irradiation

Thermal Conductivity and Specific Heat of Bulk Amorphous Chalcogenides Ge20Te80−xSex (X=0,1,2,8)

Thermal Conductivity of Cubic Silicon Carbide Single Crystals Heavily Doped by Nitrogen

Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallization

Effects of carbon concentration on the local atomic structure of amorphous GST

Growth Of Ge Quantum Dot Superlattices For Thermoelectric Applications