Abstract:Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous and the crystalline states. Despite the importance of Ge-Sb-Te alloys and the intense research they have received, the possible phases in the temperature-pressure diagram, as well as the corresponding structure-property correlations, remain to be systematically explored. In this study, by subjecting the amorphous Ge(2)Sb(2)Te(5) (a-GST) to hydrostatic-like pressure (P), the thermodynamic variable alternative to temperature, we are able to tune its electrical resistivity by several orders of magnitude, similar to the resistivity contrast corresponding to the usually investigated amorphous-to-crystalline (a-GST to rock-salt GST) transition used in current phase-change memories. In particular, the electrical resistivity drops precipitously in the P = 0 to 8 GPa regime. A prominent structural signature representing the underlying evolution in atomic arrangements and bonding in this pressure regime, as revealed by the ab initio molecular dynamics simulations, is the reduction of low-electron-density regions, which contributes to the narrowing of band gap and delocalization of trapped electrons. At P > 8 GPa, we have observed major changes of the average local structures (bond angle and coordination numbers), gradually transforming the a-GST into a high-density, metallic-like state. This high-pressure glass is characterized by local motifs that bear similarities to the body-centered-cubic GST (bcc-GST) it eventually crystallizes into at 28 GPa, and hence represents a bcc-type polyamorph of a-GST.

Pressure-induced reversible structural phase transitions and metallization in GeTe under hydrostatic and non-hydrostatic environments up to 22.9 GPa

Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

High-pressure Structural Phase Transition and Metallization in Ga2S3 under Non-Hydrostatic and Hydrostatic Conditions Up to 36.4 GPa

A pressure-induced high-pressure metallic GeTe phase

Peierls Distortion Mediated Reversible Phase Transition in GeTe under Pressure

Structural behavior and electrical transport properties of Mg2Ge under high pressure

Structural and electrical properties of GeSe and GeTe at high pressure

Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6

Pressure induced structural transitions and metallization in Ag2Te

Unusual structure and properties of germanium under pressure

Phase transition and metallization of semiconductor GeSe at high pressure

Structural, Vibrational, and Electronic Behavior of Two GaGeTe Polymorphs under compression

Pressure-Induced Changes in the Crystal Structure and Electrical Conductivity of GeV 4 S 8

High-pressure structural phase transition and metallization in Ga<sub>2</sub>S<sub>3</sub> under non-hydrostatic and hydrostatic conditions up to 36.4 GPa (vol 9, pg 2912, 2021)

Pressure-induced metallic phase transition in gallium arsenide up to 24.3 GPa under hydrostatic conditions

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

Pressure-induced Charge Density Wave Phase in Ag2−δTe

Pressure-induced stable structures and physical properties of Sr–Ge system

High-pressure phases of a hydrogen-rich compound: tetramethylgermane

Structural, Vibrational, and Electrical Transport Properties of Nodal-Line Semimetal Candidate CaCdGe under High Pressure

Pressure Induced Short-Range Structural Changes in Supercooled Liquid Ge2Sb2Te5