Abstract:PbTe and SnTe in their p-type forms have long been considered high-performance thermoelectrics, and both of them largely rely on two valence bands (the first band at L point and the second one along the Σ line) participating in the transport properties. This work focuses on the thermoelectric transport properties inherent to p-type GeTe, a member of the group IV monotellurides that is relatively less studied. Approximately 50 GeTe samples have been synthesized with different carrier concentrations spanning from 1 to 20 × 1020 cm−3, enabling an insightful understanding of the electronic transport and a full carrier concentration optimization for the thermoelectric performance. When all of these three monotellurides (PbTe, SnTe and GeTe) are fully optimized in their p-type forms, GeTe shows the highest thermoelectric figure of merit (zT up to 1.8). This is due to its superior electronic performance, originating from the highly degenerated Σ band at the band edge in the low-temperature rhombohedral phase and the smallest effective masses for both the L and Σ bands in the high-temperature cubic phase. The high thermoelectric performance of GeTe that is induced by its unique electronic structure not only provides a reference substance for understanding existing research on GeTe but also opens new possibilities for the further improvement of the thermoelectric performance of this material. A team has uncovered the electronic reasons why germanium tellurides (GeTe) are superior energy harvesters to their periodic counterparts. Efforts to improve GeTe thermoelectric efficiency focus mostly on reducing heat conductivity inside its phase-changing crystal lattice. Yanzhong Pei from Tongji University in Shanghai, China, and colleagues now show how semiconductor band tuning may also improve this compound. They synthesized over 50 samples of GeTe with a broad range of carrier concentrations. The researchers then compared transport measurements and theoretical band calculations with those for the more common lead and tin telluride thermoelectrics. The GeTe samples with the best conversion efficiency had charge carriers with lower effective masses than usual and access to numerous energy bands — a combination that enables more heat to be converted to electricity compared to lead telluride or tin telluride. This work focuses on the thermoelectric properties inherent to p-type GeTe by tuning the carrier concentration. Compared with PbTe and SnTe, GeTe shows the highest Seebeck coefficient (a) and power factor (b) in the important carrier concentration range of 1–3 × 1020 cm−3. Provided all are fully optimized in carrier concentrations, GeTe shows the highest thermoelectric figure of merit, zT at all temperatures (c). This originates from its highest degeneracy of the first valence band (along Σ line) in the low temperature phase, and the smallest effective masses for both L and Σ bands in the high temperature phase (d).

The role of Ge vacancies and Sb doping in GeTe: A Comparative Study of Thermoelectric Transport Properties in Sb<sub>x</sub>Ge<sub>1-1.5x</sub>Te and Sb<sub>x</sub>Ge<sub>1-x</sub>Te Compounds

Electrical and Thermal Transport Properties of Ge1–xPbxCuySbyTeSe2y

Electrical and Thermal Transport Properties of Ge1-xPbxCuy SbyTeSe2y

Vacancy Suppression Induced Synergetic Optimization of Thermoelectric Performance in Sb-Doped GeTe Evidenced by Positron Annihilation Spectroscopy

Vacancy-Based Defect Regulation for High Thermoelectric Performance in Ge9Sb2Te12-x Compounds

Enhanced Thermoelectric Performance in Ge0.955- X Sbx Te/FeGe2 Composites Enabled by Hierarchical Defects.

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Intrinsic vacancy suppression and band convergence to enhance thermoelectric performance of (Ge, Bi, Sb)Te crystals

Efficient Rhombohedral GeTe Thermoelectrics for Low-Grade Heat Recovery

Stabilizing the Optimal Carrier Concentration in Al/Sb-Codoped GeTe for High Thermoelectric Performance

Electronic Origin of the High Thermoelectric Performance of Gete among the P-Type Group Iv Monotellurides

Synergistically Optimized Thermal Conductivity and Carrier Concentration in GeTe by Bi–Se Codoping

Enhancing the Thermoelectric Performance of GeSb4Te7 Compounds via Alloying Se

Vacancy Manipulation for Thermoelectric Enhancements in GeTe Alloys.

Simultaneous Suppression of Phonon Transport and Carrier Concentration for Efficient Rhombohedral GeTe Thermoelectric

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Optimized Carrier Concentration and Enhanced Thermoelectric Properties in GeSb4-xBixTe7 Materials

he synergy of Sb doping and vacancy equilibrium charge improves the thermoelectric properties of GeMnTe 2

Cu/Sb Codoping for Tuning Carrier Concentration and Thermoelectric Performance of GeTe-Based Alloys with Ultralow Lattice Thermal Conductivity

Optimizing Electronic Quality Factor toward High-Performance Ge<sub>1-</sub><i><sub>x</sub></i><sub>-</sub><i><sub>y</sub></i>Ta<i><s ub>x</sub></i>Sb<i><sub>y</sub></i>Te Thermoelectrics: The Role of Transition Metal Doping

The role of electronegativity in the thermoelectric performance of GeTe-I-V-VI2 solid solutions