Abstract:In thermoelectrics, doping is essential to augment the figure of merit. Traditional strategy, predominantly heavy doping, aims to optimize carrier concentration and restrain lattice thermal conductivity. However, this tactic can severely hamper carrier transport due to pronounced point defect scattering, particularly in materials with inherently low carrier mean-free-path. Conversely, dilute doping, although minimally affecting carrier mobility, frequently fails to optimize other vital thermoelectric parameters. Herein, we present a more nuanced dilute doping strategy in GeTe, leveraging the multifaceted roles of small-size metal atoms. A mere 4% CuPbSbTe3 introduction into GeTe swiftly suppresses rhombohedral distortion and optimizes carrier concentration through the aid of Cu interstitials. Additionally, the formation of multiscale microstructures, including zero-dimensional Cu interstitials, one-dimensional dislocations, two-dimensional planar defects, and three-dimensional nanoscale amorphous GeO2 and Cu2GeTe3 precipitates, along with the ensuing lattice softening, contributes to an ultralow lattice thermal conductivity. Intriguingly, dilute CuPbSbTe3 doping incurs only a marginal decrease in carrier mobility. Subsequent trace Cd doping, employed to alleviate the bipolar effect and align the valence bands, yields an impressive figure-of-merit of 2.03 at 623 K in (Ge0.97Cd0.03Te)0.96(CuPbSbTe3)0.04. This leads to a high energy-conversion efficiency of 7.9% and a significant power density of 3.44 W cm-2 at a temperature difference of 500 K. These results underscore the invaluable insights gained into the constructive role of nuanced dilute doping in the concurrent tuning of carrier and phonon transport in GeTe and other thermoelectric materials.

he synergy of Sb doping and vacancy equilibrium charge improves the thermoelectric properties of GeMnTe 2

Vacancy Suppression Induced Synergetic Optimization of Thermoelectric Performance in Sb-Doped GeTe Evidenced by Positron Annihilation Spectroscopy

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Vacancy-Based Defect Regulation for High Thermoelectric Performance in Ge9Sb2Te12-x Compounds

Synergistically improving the thermoelectric and mechanical performance for p-type MnGe 1− x Sb x Te 2 alloys

Electrical and Thermal Transport Properties of Ge1–xPbxCuySbyTeSe2y

Thermoelectric performance optimization of GeMnSbTe compounds through increasing the Mn solid solubility: Effects of the co-doping of rare earth elements

Enhanced Thermoelectric Performance of MnTe by Decoupling of Electrical and Thermal Transports

Boosting the thermoelectric performance of GeTe via vacancy control and engineering sintering parameters

The Role of Ge Vacancies and Sb Doping in GeTe: A Comparative Study of Thermoelectric Transport Properties in SbxGe1-1.5xTe and SbxGe1-xTe Compounds

Tailoring band structure and Ge precipitates through Er and Sb/Bi co-doping to realize high thermoelectric performance in GeTe

Large Effective Mass and Ultralow Thermal Conductivity Lead to High Thermoelectric Performance in the High-Entropy Semiconductor MnGeAgBiTe4

Discordant Distortion in Cubic GeMnTe2 and High Thermoelectric Properties of GeMnTe2- x%SbTe

Medium-temperature thermoelectric GeTe: vacancy suppression and band structure engineering leading to high performance

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Regulating the Configurational Entropy to Improve the Thermoelectric Properties of (GeTe)1−x(MnZnCdTe3)x Alloys

Enhancement on thermoelectric performance by Ti doping and vacancies

Enhancing the thermoelectric performance of GeTe through Sb doping and nanocompositing with SiC for reduced thermal conductivity

Optimizing Electronic Quality Factor toward High-Performance Ge<sub>1-</sub><i><sub>x</sub></i><sub>-</sub><i><sub>y</sub></i>Ta<i><s ub>x</sub></i>Sb<i><sub>y</sub></i>Te Thermoelectrics: The Role of Transition Metal Doping

Enhancing thermoelectric performance of Sn1-Sb2/3Te via synergistic charge balanced compensation doping

Nuanced dilute doping strategy enables high-performance GeTe thermoelectrics