Abstract:PbTe and SnTe in their p-type forms have long been considered high-performance thermoelectrics, and both of them largely rely on two valence bands (the first band at L point and the second one along the Σ line) participating in the transport properties. This work focuses on the thermoelectric transport properties inherent to p-type GeTe, a member of the group IV monotellurides that is relatively less studied. Approximately 50 GeTe samples have been synthesized with different carrier concentrations spanning from 1 to 20 × 1020 cm−3, enabling an insightful understanding of the electronic transport and a full carrier concentration optimization for the thermoelectric performance. When all of these three monotellurides (PbTe, SnTe and GeTe) are fully optimized in their p-type forms, GeTe shows the highest thermoelectric figure of merit (zT up to 1.8). This is due to its superior electronic performance, originating from the highly degenerated Σ band at the band edge in the low-temperature rhombohedral phase and the smallest effective masses for both the L and Σ bands in the high-temperature cubic phase. The high thermoelectric performance of GeTe that is induced by its unique electronic structure not only provides a reference substance for understanding existing research on GeTe but also opens new possibilities for the further improvement of the thermoelectric performance of this material. A team has uncovered the electronic reasons why germanium tellurides (GeTe) are superior energy harvesters to their periodic counterparts. Efforts to improve GeTe thermoelectric efficiency focus mostly on reducing heat conductivity inside its phase-changing crystal lattice. Yanzhong Pei from Tongji University in Shanghai, China, and colleagues now show how semiconductor band tuning may also improve this compound. They synthesized over 50 samples of GeTe with a broad range of carrier concentrations. The researchers then compared transport measurements and theoretical band calculations with those for the more common lead and tin telluride thermoelectrics. The GeTe samples with the best conversion efficiency had charge carriers with lower effective masses than usual and access to numerous energy bands — a combination that enables more heat to be converted to electricity compared to lead telluride or tin telluride. This work focuses on the thermoelectric properties inherent to p-type GeTe by tuning the carrier concentration. Compared with PbTe and SnTe, GeTe shows the highest Seebeck coefficient (a) and power factor (b) in the important carrier concentration range of 1–3 × 1020 cm−3. Provided all are fully optimized in carrier concentrations, GeTe shows the highest thermoelectric figure of merit, zT at all temperatures (c). This originates from its highest degeneracy of the first valence band (along Σ line) in the low temperature phase, and the smallest effective masses for both L and Σ bands in the high temperature phase (d).

Tailoring band structure and Ge precipitates through Er and Sb/Bi co-doping to realize high thermoelectric performance in GeTe

Electronic Origin of the High Thermoelectric Performance of Gete among the P-Type Group Iv Monotellurides

Dilute Cu2Te-alloying Enables Extraordinary Performance of R-Gete Thermoelectrics

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Enhanced Thermoelectric Performance in Ge0.955- X Sbx Te/FeGe2 Composites Enabled by Hierarchical Defects.

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Medium-temperature thermoelectric GeTe: vacancy suppression and band structure engineering leading to high performance

Realizing High Thermoelectric Performance in GeTe Through Optimizing Ge Vacancies and Manipulating Ge Precipitates

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Nuanced dilute doping strategy enables high-performance GeTe thermoelectrics

Improved Thermoelectric Performance of GeTe Via Efficient Yttrium Doping

Efficient Rhombohedral GeTe Thermoelectrics for Low-Grade Heat Recovery

Synergistic Tuning of Carrier Mobility, Effective Mass, and Point Defects Scattering Triggered High Thermoelectric Performance in N-Type Ge-doped PbTe

Ultralow Lattice Thermal Conductivity and Superhigh Thermoelectric Figure‐of‐Merit in (Mg, Bi) Co‐Doped GeTe

Enhancing thermoelectric performance in GeTe through Ge enrichment regulation and AgCuTe alloying

Optimizing Electronic Quality Factor toward High‐Performance Ge 1− x − y Ta x Sb y Te Thermoelectrics: The Role of Transition Metal Doping

Optimizing Electronic Quality Factor toward High-Performance Ge<sub>1-</sub><i><sub>x</sub></i><sub>-</sub><i><sub>y</sub></i>Ta<i><s ub>x</sub></i>Sb<i><sub>y</sub></i>Te Thermoelectrics: The Role of Transition Metal Doping

Origin of the High Performance in GeTe-Based Thermoelectric Materials Upon Bi2Te3 Doping

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

High Performance GeTe Thermoelectrics Enabled by Lattice Strain Construction

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.