Abstract:The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials.

Metrics for Quantification of By-Process Segregation in Ge-Rich GST

Study of Ge‐rich GST Device‐Dependent Segregation for Industrial Grade Embedded PCM

Investigation of Phase Segregation Dynamics in Ge‐rich GST Thin Films by In‐situ X‐ray Fluorescence Mapping

Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallization

Tailoring the Oxygen Concentration in Ge-Sb-O Alloys to Enable Femtojoule-Level Phase-Change Memory Operations

Effect of vacancy ordering on the grain growth of Ge2Sb2Te5 film

A thermodynamic metric for process quality assessment in manufacturing: Pb vs. Pb-free solders spreading case study

Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

Phase-field modeling of the non-congruent crystallization of a ternary Ge–Sb–Te alloy for phase-change memory applications

Phase and grain size engineering in Ge-Sb-Te-O by alloying with La-Sr-Mn-O towards improved material properties

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Electronic Properties of GST for Non-Volatile Memory

Uncertainty Analysis of Microsegregation during Laser Powder Bed Fusion

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation.

A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

Ab initio molecular dynamics and materials design for embedded phase-change memory