Abstract:The reversible switching between the amorphous and crystalline phases of Ge 2 Sb 2 Te 5 (GST) is investigated with ab initio molecular dynamics. We apply different quench rates (-16 K/ps, -5 K/ps, -2 K/ps, and -0.45 K/ps) and different annealing temperatures (500 K, 600 K, 700 K, and 800 K) to amorphize and crystallize GST respectively. Results show that the generated amorphous is strongly dependent on the quench rate. For -16 K/ps and -5 K/ps, generated amorphous samples have different density of crystal seeds, higher in the later. The amorphous structure formed at -2 K/ps contains a single crystalline cluster, while that formed at the quench rate of -0.45 K/ps had sufficient time to completely crystallize the amorphous phase. Annealing the amorphous systems formed at different rates shows that crystallization depends both on the annealing temperature and on the structure of the initial system (i.e., whether or not it contains crystalline clusters or crystal seeds). At 500 K, formation of crystalline clusters occurs readily within a few ps while the rate at which they grow is slow, taking 0.9 ns to complete the crystallization. In contrast, crystalline cluster formation is inhibited at 800 K. In the intermediate temperature range, both crystalline cluster formation and growth occur within a few hundred ps indicating that these temperatures leads to the fastest crystallization. The crystallization of a 63-atom at ~900 K resulted in a highly relaxed crystal structure showing a clear tendency for separation of Ge and Sb species in layers. This model also indicates a tendency of segregation of vacancies, suggesting that vacancy layering may play a key role in the crystallization process.

Crystallization Process of in Situ Annealed Ge2Sb2Te5 Films

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Study on the Crystallization by an Electrical Resistance Measurement in Ge2sb2te5 and N-Doped Ge2sb2te5 Films

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film

Crystallization of amorphous N‐doped Ge‐rich GST layers deposited on a polycrystalline GST template

The Thickness Dependence of the Crystallization Behavior in Sandwiched Amorphous Ge2sb2te5 Thin Films

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

Preparation and Characterization of Laser-Irradiation Induced Amorphous for Ge 2 Sb 2 Te 5 Phase-Change Materials

Investigation of Phase Segregation Dynamics in Ge‐rich GST Thin Films by In‐situ X‐ray Fluorescence Mapping

Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films

Study of Crystallization in Ge2sb2te5

In situ transmission electron microscopy observations of the crystallization of amorphous Ge films

Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature

Temperature-dependent phase separation during annealing of Ge 2 Sb 2 Te 5 thin films in vacuum

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

Mechanical Stress Effect on the Crystallization Behavior of Ge2Sb2Te5 Films Studied by Electrical Resistance Measurement

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films