Abstract:The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials.

Mechanical Stress Effect on the Crystallization Behavior of Ge2Sb2Te5 Films Studied by Electrical Resistance Measurement

Influences of Deposition Temperature and Rate on Mechanical Stress of Electron Beam Deposited ZnSe Thin Films

X-ray Stress Evaluation in Phase Change GeSbTe Material and TiW Electrodes

Crystallization-Induced Stress In Thin Phase Change Films Of Different Thicknesses

Study on the Crystallization by an Electrical Resistance Measurement in Ge2sb2te5 and N-Doped Ge2sb2te5 Films

The Change of Glass Transition Temperature under General Stress State in Amorphous Materials

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Crystallization-induced Stress in Phase Change Random Access Memory

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Mechanical Properties of Phase-change Recording Media: GeSbTe Films

Crystallization Process of in Situ Annealed Ge2Sb2Te5 Films

Study of Crystallization in Ge2sb2te5

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Strain effects on polycrystalline germanium thin films

Improvement of thermal stability and phase change behavior of Ge2Sb2Te5 thin films by Calcium doping

The Thickness Dependence of the Crystallization Behavior in Sandwiched Amorphous Ge2sb2te5 Thin Films

Temperature-dependent phase separation during annealing of Ge 2 Sb 2 Te 5 thin films in vacuum

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Crystallization Behaviors of an Ultra-Thin Ga–Sb Film

Effects of Si-ion implantation on crystallization behavior of Ge 2 Sb 2 Te 5 film