Abstract:The reversible switching between the amorphous and crystalline phases of Ge 2 Sb 2 Te 5 (GST) is investigated with ab initio molecular dynamics. We apply different quench rates (-16 K/ps, -5 K/ps, -2 K/ps, and -0.45 K/ps) and different annealing temperatures (500 K, 600 K, 700 K, and 800 K) to amorphize and crystallize GST respectively. Results show that the generated amorphous is strongly dependent on the quench rate. For -16 K/ps and -5 K/ps, generated amorphous samples have different density of crystal seeds, higher in the later. The amorphous structure formed at -2 K/ps contains a single crystalline cluster, while that formed at the quench rate of -0.45 K/ps had sufficient time to completely crystallize the amorphous phase. Annealing the amorphous systems formed at different rates shows that crystallization depends both on the annealing temperature and on the structure of the initial system (i.e., whether or not it contains crystalline clusters or crystal seeds). At 500 K, formation of crystalline clusters occurs readily within a few ps while the rate at which they grow is slow, taking 0.9 ns to complete the crystallization. In contrast, crystalline cluster formation is inhibited at 800 K. In the intermediate temperature range, both crystalline cluster formation and growth occur within a few hundred ps indicating that these temperatures leads to the fastest crystallization. The crystallization of a 63-atom at ~900 K resulted in a highly relaxed crystal structure showing a clear tendency for separation of Ge and Sb species in layers. This model also indicates a tendency of segregation of vacancies, suggesting that vacancy layering may play a key role in the crystallization process.

The Thickness Dependence of the Crystallization Behavior in Sandwiched Amorphous Ge2sb2te5 Thin Films

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Study on the Crystallization by an Electrical Resistance Measurement in Ge2sb2te5 and N-Doped Ge2sb2te5 Films

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study

Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films

Crystallization Process of in Situ Annealed Ge2Sb2Te5 Films

Investigation of Crystallization Behavior and Structure of Nanocomposite Multilayer Phase Change Thin Films with Zinc Antimony and Germanium Antimony

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Study of Crystallization in Ge2sb2te5

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Crystallization of amorphous N‐doped Ge‐rich GST layers deposited on a polycrystalline GST template

Effects of Thickness and Si 3 N 4 Coverage on the Phase Transition Characteristics of GeTe Thin Films

Crystallization kinetics of amorphous Ga–Sb–Te films: Part II. Isothermal studies by a time-resolved optical transmission method

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

Effect of the Sn dopant on the crystallization of amorphous Ge 2 Sb 2 Te 5 films induced by an excimer laser

Mechanical Stress Effect on the Crystallization Behavior of Ge2Sb2Te5 Films Studied by Electrical Resistance Measurement

Effects of carbon concentration on the local atomic structure of amorphous GST

Effect of thickness and crystallization on the optical energy gap of some chalcogenide phase-change thin films