Abstract:The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials.

Effects of Si-ion implantation on crystallization behavior of Ge 2 Sb 2 Te 5 film

Characteristics of phase transition in boron-implanted Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin films for phase change memory applications

Improved Phase-Change Characteristics of Si Doped Gesbte Thin Films Used for Phase Change Memory

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Effects of Si Doping on the Structural and Electrical Properties of Ge2Sb2Te5 Films for Phase Change Random Access Memory

Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Crystallization Behavior of Si-added Amorphous Ga19Sb81 Films for Phase-Change Memory

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Study on X-ray irradiation induced effect of phase-change material Ge2Sb2Te5

Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in Situ Resistance Measurements

Crystallization Properties of the Ge2Sb2Te5 Phase‐Change Compound from Advanced Simulations

Electronic Properties of GST for Non-Volatile Memory

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Si Doping in Ge2Sb2Te5 Film to Reduce the Writing Current of Phase Change Memory

Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge 3Sb 2Te 5 for phase-change memory application

Effect of vacancy ordering on the grain growth of Ge2Sb2Te5 film

Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications