Abstract:Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.

Study on X-ray irradiation induced effect of phase-change material Ge2Sb2Te5

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Effect of Ultraviolet Radiation on Properties of Ge2Sb2Te5 Phase Change Films

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Comparable Study on Proton Radiation Effects for Amorphous and Crystalline Ge2Sb2Te5

High tolerance of proton irradiation of Ge2Sb2Te 5 phase change material

Phase change of Ge 2 Sb 2 Te 5 under terahertz laser illumination

Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature

Preparation and Characterization of Laser-Irradiation Induced Amorphous for Ge 2 Sb 2 Te 5 Phase-Change Materials

Effect of Gamma Exposure on Chalcogenide Glass Films for Microphotonic Devices

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Effects of Si-ion implantation on crystallization behavior of Ge 2 Sb 2 Te 5 film

Improvement of thermal stability and phase change behavior of Ge2Sb2Te5 thin films by Calcium doping

Phase Change Characteristics of Aluminum Doped Ge_2Sb_2Te_5 Films Prepared by Magnetron Sputtering

A Study on Inorganic Phase-Change Resist Ge2Sb2(1-x)Bi2xTe5 and Its Mechanism.

Structural and Electronic Transitions in Ge2sb2te5 Induced by Ion Irradiation Damage

X-ray Stress Evaluation in Phase Change GeSbTe Material and TiW Electrodes

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Ultrafast Crystallization and Thermal Stability of In–Ge Doped Eutectic Sb70Te30 Phase Change Material

Temperature-dependent phase separation during annealing of Ge 2 Sb 2 Te 5 thin films in vacuum