Abstract:Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, <math> α</math> and <math> γ</math>) and one at high temperature (crystalline, <math> β</math>). Because transitions between the amorphous and crystalline states lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been investigated as a phase-change material for photonics, thermoelectrics, ferroelectrics, and spintronics. Consequently, the temperature-dependent phase transitions in GeTe have been studied for bulk and thin-film GeTe, both fabricated by sputtering. Colloidal synthesis of nanoparticles offers a more flexible fabrication approach for amorphous and crystalline GeTe. These nanoparticles are known to exhibit size-dependent properties, such as an increased crystallization temperature for the amorphous-to-<math> α</math> transition in sub-10 nm GeTe particles. The <math> α</math>-to-<math> β</math> phase transition is also expected to vary with size, but this effect has not yet been investigated for GeTe. Here, we report time-resolved x-ray diffraction of GeTe nanoparticles with different diameters and from different synthetic protocols. We observe a non-volatile amorphous-to-<math> α</math> transition between 210 <math> °</math>C and 240 <math> °</math>C and a volatile <math> α</math>-to-<math> β</math> transition between 370 <math> °</math>C and 420 <math> °</math>C. The latter transition was reversible and repeatable. While the transition temperatures are shifted relative to the values known for bulk GeTe, the nanoparticle-based samples still exhibit the same structural phases reported for sputtered GeTe. Thus, colloidal GeTe maintains the same general phase behavior as bulk GeTe while allowing for more flexible and accessible fabrication. Therefore, nanoparticle-based GeTe films show great potential for applications such as in active photonics.

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Effect of Gamma Exposure on Chalcogenide Glass Films for Microphotonic Devices

Effect of Ultraviolet Radiation on Properties of Ge2Sb2Te5 Phase Change Films

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Modulation of opto-electronic properties of InSe thin layers via phase transformation

Study on X-ray irradiation induced effect of phase-change material Ge2Sb2Te5

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

Phase Transitions in Germanium Telluride Nanoparticle Phase-Change Materials Studied by Time-Resolved X-Ray Diffraction

Medium-range structural order in amorphous Ge2Sb2Te5 phase change material

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Phase transitions in germanium telluride nanoparticle phase-change materials studied by temperature-resolved x-ray diffraction

Unraveling a Novel Ferroelectric GeSe Phase and Its Transformation into a Topological Crystalline Insulator under High Pressure

Characteristics of phase transition in boron-implanted Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin films for phase change memory applications