Abstract:The 2D Bi2Te3 narrow bandgap semiconductor is an outstanding applicant for optoelectronics and thermoelectric devices. The doping of Se into Bi2Te3 makes metal-double chalcogenide more important. In the current investigation, the Se diffusion into the Bi2Te3 film by thermal annealing at different temperatures is probed through a temperature-dependent Raman study along with other characterizations. Upon annealing, the Se/Bi2Te3 films of ∼810 nm thickness resulted in significant changes to their structural, electronic, and optical behavior. The existence of a rhombohedral Bi2Te3 phase was confirmed by structural investigation. The improvement in crystallinity and decrease in lattice strain modified the optical behavior of the films. The morphology analysis showed a slight aggregation at the higher annealed stage. The uniform and homogeneous dispersal and the composition of elements in the film were verified through surface mapping and compositional analysis. The optical investigation revealed a drop in absorbance with increased transmittance. The direct optical bandgap increased from 0.53 ± 0.002 to 0.77 ± 0.002 eV, showing a blue shift. The non-linear refractive index decreased from 3.72 to 1.85 × 10−16 m2/W upon annealing. The temperature-dependent Raman analysis demonstrated a thermally induced significant vibrational change in the material with specific additional peaks at higher annealing. Such findings can be employed as a phase change material at very high temperatures. The obtained findings are very useful for optoelectronic applications. Surface wettability shows a reduction in hydrophilicity, thus inching toward a hydrophobic one with an increase in annealing temperatures. The enhancement in the photocurrent with the increment in the annealing temperature is more suitable for photovoltaic applications.

Modulation of opto-electronic properties of InSe thin layers via phase transformation

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets.

Temperature-Driven alpha-beta Phase Transformation and Enhanced Electronic Property of 2H alpha-In2Se3

Reversible Thermally Driven Phase Change of Layered In 2 Se 3 for Integrated Photonics

Substrate-induced phase control of In2Se3 thin films

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Phase-Engineered Growth of Ultrathin InSe Flakes by Chemical Vapor Deposition for High-Efficiency Second Harmonic Generation.

Optical Studies of the Thermal Stability of InSe Nanosheets

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering

Large-area optoelectronic-grade InSe thin films via controlled phase evolution

Temperature-dependent Growth of Few Layer Β-Inse and Α-In2se3 Single Crystals for Optoelectronic Device

Ultrasensitive Tunability of the Direct Bandgap of 2D InSe Flakes Via Strain Engineering

Ultrasensitive Tunability of the Direct Bandgap of Two-dimensional InSe Flakes via Strain Engineering

Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse

Influence of phase transformation on structure–property relationship in quaternary In10Sb10Ag10Se70 chalcogenide films

Investigating the temperature-dependent Raman spectroscopy of Se/Bi2Te3 thin films and its enhanced photoresponse for optoelectronic applications