Abstract:The 2D Bi2Te3 narrow bandgap semiconductor is an outstanding applicant for optoelectronics and thermoelectric devices. The doping of Se into Bi2Te3 makes metal-double chalcogenide more important. In the current investigation, the Se diffusion into the Bi2Te3 film by thermal annealing at different temperatures is probed through a temperature-dependent Raman study along with other characterizations. Upon annealing, the Se/Bi2Te3 films of ∼810 nm thickness resulted in significant changes to their structural, electronic, and optical behavior. The existence of a rhombohedral Bi2Te3 phase was confirmed by structural investigation. The improvement in crystallinity and decrease in lattice strain modified the optical behavior of the films. The morphology analysis showed a slight aggregation at the higher annealed stage. The uniform and homogeneous dispersal and the composition of elements in the film were verified through surface mapping and compositional analysis. The optical investigation revealed a drop in absorbance with increased transmittance. The direct optical bandgap increased from 0.53 ± 0.002 to 0.77 ± 0.002 eV, showing a blue shift. The non-linear refractive index decreased from 3.72 to 1.85 × 10−16 m2/W upon annealing. The temperature-dependent Raman analysis demonstrated a thermally induced significant vibrational change in the material with specific additional peaks at higher annealing. Such findings can be employed as a phase change material at very high temperatures. The obtained findings are very useful for optoelectronic applications. Surface wettability shows a reduction in hydrophilicity, thus inching toward a hydrophobic one with an increase in annealing temperatures. The enhancement in the photocurrent with the increment in the annealing temperature is more suitable for photovoltaic applications.

Temperature-Driven alpha-beta Phase Transformation and Enhanced Electronic Property of 2H alpha-In2Se3

Controlled Synthesis of High-Quality Monolayered Α-In2se3 Via Physical Vapor Deposition.

Modulation of opto-electronic properties of InSe thin layers via phase transformation

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Phase Transformation Of Beta-Fesi2-Based Alloys Under In-Situ High-Temperature And High-Pressure X-Ray Diffraction Measurements

Contact Properties of Two-Dimensional Ferroelectric Α-In2se3

Substrate-induced phase control of In2Se3 thin films

Phase‐Transformation‐Induced Giant Deformation in Thermoelectric Ag 2 Se Semiconductor

First-principles study of phase transition in the α-In2Se3/metal heterostructures

Thickness-Dependent Band Gap Of Alpha-In2se3: From Electron Energy Loss Spectroscopy To Density Functional Theory Calculations

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Reversible Thermally Driven Phase Change of Layered In 2 Se 3 for Integrated Photonics

Investigating the temperature-dependent Raman spectroscopy of Se/Bi2Te3 thin films and its enhanced photoresponse for optoelectronic applications

First-principles investigation of structural and electronic properties of α phase In2Se3

Low-temperature Processed Beta-Phase In2Se3 Ferroelectric Semiconductor Thin Film Transistors

Hierarchical Structures Advance Thermoelectric Properties Of Porous N-Type Beta-Ag2se