Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Phase-controllable Large-Area Two-Dimensional in 2 Se 3 and Ferroelectric Heterophase Junction

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Non-volatile control of topological phase transition in an asymmetric ferroelectric In2Te2S monolayer

Reversible Thermally Driven Phase Change of Layered In 2 Se 3 for Integrated Photonics

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling

Multiple modulation of magnetism in two-dimensional FeCl2/In2Se3 van der Waals heterostructure

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

Reversible electrochromism in α-In2Se3 through ferroelectric switching induced phase transition

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Substrate-induced phase control of In2Se3 thin films

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Reversible Gas Sensing by Ferroelectric Switch and 2D Molecule Multiferroics in In2Se3 Monolayer