Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor Α-In2se3 for Nonvolatile Memory

Exploring Ferroelectric Switching in α‐In 2 Se 3 for Neuromorphic Computing

Stacking Selected Polarization Switching and Phase Transition in Vdw Ferroelectric Α-In2se3 Junction Devices

Giant Bandgap Engineering in Two-Dimensional Ferroelectric alpha-In2Se3

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures

Out-of-plane and in-plane ferroelectricity of atom-thick two-dimensional InSe

Ferroelectricity in 2D Elemental Materials

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Periodic Ferroelectric Stripe Domains in α-In 2 Se 3 Nanoflakes Grown via Reverse-Flow Chemical Vapor Deposition

In-Plane Ferrielectric Order in van der Waals β'-In2Se3

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Room-temperature Out-of-plane and In-Plane Ferroelectricity of Two-Dimensional Β-Inse Nanoflakes

Reversible Gas Sensing by Ferroelectric Switch and 2D Molecule Multiferroics in In2Se3 Monolayer

Reversible electrochromism in α-In2Se3 through ferroelectric switching induced phase transition