Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Out-of-plane and in-plane ferroelectricity of atom-thick two-dimensional InSe

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Room-temperature Out-of-plane and In-Plane Ferroelectricity of Two-Dimensional Β-Inse Nanoflakes

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Ferroelectric and Dipole Control of Band Alignment in the Two Dimensional InTe/In2Se3 Heterostructure

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

In-Plane Ferrielectric Order in van der Waals β'-In2Se3

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling

Valence mediated tunable magnetism and electronic properties by ferroelectric polarization switching in 2D FeI/InSe van der Waals heterostructures.

Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric -In<sub>2</sub>Se<sub>3</sub>

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Ferroelectric phase transition driven by anharmonic lattice mode coupling in two-dimensional monolayer In2Se3

Atomic Visualization and Switching of Ferroelectric Order in Β‐in2se3 Films at the Single Layer Limit

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3