Abstract:Leveraging from thickness control methodology, vertical ferroelectric polarization switching is recorded on a 6 nm thick specimen probed by a piezoresponse force microscopy. The ferroelectric origin is uncovered by first‐principles density‐functional theory calculations. Bi2O2Se‐based field‐effect transistor demonstrated an unprecedented current on–off ratio of 108 and carrier mobility of 131 cm2 V−1 s−1. This work manifests the feasibility of 2D Bi2O2Se for next‐generation electronics. The amelioration of atomically thin ferroelectric materials is imperative for next‐generation outperformed two‐dimensional (2D) electronics, which is elusive by their bulk counterparts. These remarkable materials' ferroelectric and piezoelectric features are the fundamental urges in optoelectronics, electronics, and energy harvesting. In this work, 2D ferroelectric Bi2O2Se flakes have been synthesized using a modified chemical vapor deposition technique. The 6 nm thick Bi2O2Se flake provides a robust ferroelectric switching under an applied voltage of ±10 V by piezoresponse force microscopy, further confirmed by first principles. Leveraging the successful growth, the high‐quality Bi2O2Se flakes permit the fabrication of a field‐effect transistor (FET) with state‐of‐the‐art performance. The FET device rewards a high current on–off ratio of 108 and field effect mobility of almost 131 cm2 V−1 s−1, owing to the small carrier effective mass of 0.2 m0. Combined, the electric field‐induced local polarization of ferroelectric switching and unprecedented device performance of Bi2O2Se semiconductors are certified for their utilization in advanced nanoelectronics and miniaturization of multifunctional devices with multifunctionalities.

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Phase-controllable Large-Area Two-Dimensional in 2 Se 3 and Ferroelectric Heterophase Junction

Two-dimensional epitaxy of SnSe film on In2Se3 induced by intrinsic out-of-plane ferroelectricity

Out-of-plane and in-plane ferroelectricity of atom-thick two-dimensional InSe

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Two‐dimensional In2Se3: A Rising Advanced Material for Ferroelectric Data Storage

Two-dimensional ferroelectric tunnel junction: the case of monolayer In:SnSe/SnSe/Sb:SnSe homostructure

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$

Ferroelectricity in Covalently Functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

The Robust Ferroelectric and Electrical Response in 2D Bi2O2Se Semiconductor

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial Β–in2se3 Thin Films

Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets

Probing the electric and thermoelectric response of ferroelectric 2H and 3R α-In2Se3

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy