Abstract:High-density integration of ferroelectric field-effect transistors (FeFETs) is hindered by factors such as interfacial states, short-channel effects, and ferroelectricity degradation in ultrathin films. Accordingly, the introduction of two-dimensional (2D) materials could effectively solve these problems. However, most current studies focus on the replacement of Si-based channels with 2D channels. Little progress has been made in addressing issues caused by bulk-phase ferroelectric gate layers, such as the unavoidable rough interfaces and the fading of ferroelectricity in ultrathin films. Herein, the 2D ferroelectric material In 2 Se 3 is introduced as the gate dielectric. Combined with 2D insulating h-BN and 2D channel MoS 2 , an all-van der Waals (vdW) stacking FeFET is fabricated to provide a straight solution for the abovementioned issues. First, the robust ferroelectric phase of In 2 Se 3 is verified in an ultrathin film case and a high-temperature case, which is outstanding among recently reported 2D ferroelectrics. Second, device-level out-of-plane ferroelectric polarization switching is achieved in the cross-structure device. Based on these results, In 2 Se 3 is adopted as the ferroelectric gate dielectric to fabricate all-vdW stacking FeFETs. The subsequent transistor performance measurement on the fabricated FeFETs indicates that the ferroelectric polarization of the In 2 Se 3 layer plays a dominating role in forming a counterclockwise hysteresis loop. Further pulse response measurements manifest the feasibility of nonvolatile channel conductance tuning of these devices with a proper pulse design. Our findings suggest that In 2 Se 3 is a suitable 2D ferroelectric gate material and that all-vdW stacking FeFETs based on 2D ferroelectrics are promising in the application of high-density memory.

Phase-controllable Large-Area Two-Dimensional in 2 Se 3 and Ferroelectric Heterophase Junction

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction.

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Two‐dimensional In2Se3: A Rising Advanced Material for Ferroelectric Data Storage

Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor Α-In2se3 for Nonvolatile Memory

Non-volatile Ferroelectric Memory Effect in Ultrathin Α-In2se3

All-van der Waals stacking ferroelectric field-effect transistor based on In 2 Se 3 for high-density memory

All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Nonvolatile Ferroelectric Memory with Lateral Β/α/β In2Se3 Heterojunctions

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Flash In2Se3 for neuromorphic computing

Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.

Controllable growth α-In2Se3 flakes by chemical vapor deposition

Ferroelectricity in Covalently Functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

2D Multiferroics in As‐Substituted Bilayer Α‐in2se3 with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device

Emergence of ferroelectricity in P‐Type 2D In1.75Sb0.25Se3

2D Molecular Ferroelectric with Large Out‐of‐plane Polarization for In‐Memory Computing