Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

Emergence of ferroelectricity in P‐Type 2D In1.75Sb0.25Se3

Non-volatile Ferroelectric Memory Effect in Ultrathin Α-In2se3

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor Α-In2se3 for Nonvolatile Memory

Two‐dimensional In2Se3: A Rising Advanced Material for Ferroelectric Data Storage

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory

All-van der Waals stacking ferroelectric field-effect transistor based on In 2 Se 3 for high-density memory

Phase-controllable Large-Area Two-Dimensional in 2 Se 3 and Ferroelectric Heterophase Junction

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.

Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Funct. Mater. 20/2019)

Ferroelectricity in Covalently Functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

Room-temperature Out-of-plane and In-Plane Ferroelectricity of Two-Dimensional Β-Inse Nanoflakes

Exploring Ferroelectric Switching in α‐In 2 Se 3 for Neuromorphic Computing

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

A Ferroelectric Semiconductor Field-Effect Transistor

The Robust Ferroelectric and Electrical Response in 2D Bi2O2Se Semiconductor

Ferroelectric control of the semiconductor-metal transition in two-dimensional / ( = , ) van der Waals heterostructures and application to nonvolatile memory devices

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures

Emergence of ferroelectricity in a nonferroelectric monolayer