Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

A Ferroelectric Semiconductor Field-Effect Transistor

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Funct. Mater. 20/2019)

Nonvolatile Ferroelectric Field-Effect Transistors.

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

Two-dimensional Ferroelectric Semiconductor Floating-Gate Transistor with Light-Tunable Field Effect for Memory and Photo-Synapse

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides As Nonvolatile Memory

Ferroelectric field effect transistors for electronics and optoelectronics

Non-volatile Ferroelectric Memory Effect in Ultrathin Α-In2se3

Ferroelectric Field-Effect Transistors Based on WSe 2 /CuInP 2 S 6 Heterostructures for Memory Applications

All-van der Waals stacking ferroelectric field-effect transistor based on In 2 Se 3 for high-density memory

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor Α-In2se3 for Nonvolatile Memory

Ferroelectric-Modulated MoS2 Field-Effect Transistors As Multilevel Nonvolatile Memory.

Ferroelectric Fet for Nonvolatile Memory Application with Two-Dimensional Mose2 Channels

ScAlN-Based ITO Channel Ferroelectric Field-Effect Transistors With Large Memory Window

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide