Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

Non-volatile Ferroelectric Memory Effect in Ultrathin Α-In2se3

Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Funct. Mater. 20/2019)

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor Α-In2se3 for Nonvolatile Memory

All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory

Ferroelectric Fet for Nonvolatile Memory Application with Two-Dimensional Mose2 Channels

All-van der Waals stacking ferroelectric field-effect transistor based on In 2 Se 3 for high-density memory

Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.

Nonvolatile Ferroelectric Memory with Lateral Β/α/β In2Se3 Heterojunctions

Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides As Nonvolatile Memory

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

2D Multiferroics in As‐Substituted Bilayer Α‐in2se3 with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device

A Ferroelectric Semiconductor Field-Effect Transistor

Two‐dimensional In2Se3: A Rising Advanced Material for Ferroelectric Data Storage

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Ferroelectric Control of Electron Half-Metallicity in A-type Antiferromagnets and Its Application to Nonvolatile Memory Devices

Nonvolatile Memory Based on Molecular Ferroelectric/Graphene Field Effect Transistor.

Gate-controlled Non-Volatile Graphene-Ferroelectric Memory