A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory
Wanying Li,Yimeng Guo,Zhaoping Luo,Shuhao Wu,Bo Han,Weijin Hu,Lu You,Kenji Watanabe,Takashi Taniguchi,Thomas Alava,Jiezhi Chen,Peng Gao,Xiuyan Li,Zhongming Wei,Lin‐Wang Wang,Yue‐Yang Liu,Chengxin Zhao,Xuepeng Zhan,Zheng Vitto Han,Hanwen Wang
DOI: https://doi.org/10.1002/adma.202208266
IF: 29.4
2022-11-19
Advanced Materials
Abstract:Ferroelectricity, one of the keys to realize non‐volatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two‐dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materials as an ingredient are very limited. Especially, gate‐tunable ferroelectric vdW memristive device, which holds promises in future multi‐bit data storage applications, remains challenging. Here, we show a gate‐programmable multi‐state memory by vertically assembling graphite, CuInP2S6, and MoS2 layers into a metal(M)‐ferroelectric(FE)‐semiconductor(S) architecture. The resulted devices seamlessly integrate the functionality of both FE‐memristor (with ON‐OFF ratios exceeding 105 and long‐term retention) and metal‐oxide‐semiconductor field effect transistor (MOS‐FET). It thus yields a prototype of gate tunable giant electroresistance with multi‐levelled ON‐states in the FE‐memristor in the vertical vdW assembly. First‐principles calculations further reveal that such behaviors originate from the specific band alignment between the FE‐S interface. Our findings pave the way for the engineering of ferroelectricity‐mediated memories in future implementations of 2D nanoelectronics. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology