Abstract:High readout domain-wall currents in LiNbO3 single-crystal nanodevices are attractive because of their application in a ferroelectric domain wall random access memory (DWRAM) to drive a fast memory circuit. However, the wall current at a small read voltage would increase nonlinearly at a much higher write voltage, which could cause high energy consumption. Here, we resolved this problem by controlling the two-step domain forward growth within a ferroelectric mesa-like cell that was formed at the surface of an X-cut LiNbO3 single crystal. The mesa-like cell contacts two side Pt/Ni electrodes that extend over the cell surface by 90 nm for the generation of an in-plane inhomogeneous electric field. The domain forward growth processes at first in the formation of an inclined charged 180° domain to span the in-plane electrode gap under a write voltage of 5 V in a large readout wall current, and then, the domain expands fully throughout the entire cell in the formation of a neutral 180° wall to reduce the wall current by 10 times at a higher write voltage of 6 V. Meantime, the domain below the mesa-like cell in an opposite orientation is unchanged to serve as the reference. A higher wall current at a lower read voltage and a lower wall current at a higher write voltage can satisfy both requirements of low energy consumption and fast operation speeds for the DWRAM.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13534?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13534</a>.Electric potential distributions, in-plane PFM phase images, and Ir–Vw hysteresis loops (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13534/suppl_file/am0c13534_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Optoelectronic Ferroelectric Domain‐Wall Memories Made from a Single Van Der Waals Ferroelectric

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Nonvolatile Ferroelectric Domain Wall Memory Integrated on Silicon

Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Temporary Formation of Highly Conducting Domain Walls for Non-Destructive Read-out of Ferroelectric Domain-Wall Resistance Switching Memories.

Nonvolatile Ferroelectric‐Domain‐Wall Memory Embedded in a Complex Topological Domain Structure

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

Domain-wall Nanoelectronics in Ferroelectric Memory

A Ferroelectric Domain-Wall Transistor

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Energy-Efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics

In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces

Next-generation Ferroelectric Domain-Wall Memories: Principle and Architecture

Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors

Thin film ferroelectric photonic-electronic memory

Ferroelectric Domain Wall Memory and Logic

Hybrid Dry and Wet Etching of LiNbO3 Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties.

Low-voltage Operation of High-Density Ferroelectric Domain Wall Memory

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO 3 Thin Films