Abstract:The MoS2/Ba0.6Sr0.4TiO3‐FETs exhibited remarkable non‐volatile memory properties and memristive behavior, which can be switched by gate voltage. As a non‐volatile memory, it delivers low operating energy at ≈0.3 pJ per spike. Using the historic memory behaviors, a cryptosystem is developed with auto‐generated reading log which is tamper‐resistant at hardware level. Moreover, the synaptic functions are also realized on the device such as the short‐term potentiation/depression and gating‐depending synaptic plasticity. To overcome the von Neumann bottleneck between memory and computing, the novel architectures with computing in‐memory are paid much attention and expected to be compatible with digital logic computing and/or analog brain‐inspired neuromorphic computing. Herein, by combining the Ba0.6Sr0.4TiO3 (BST) ferroelectric film and MoS2 layered semiconductor, a non‐volatile memory is constructed, which deliver the gate‐switchable function between the digital and analog functionality modes. The on/off ratio, subthreshold swing, and carrier mobility of MoS2/BST ferroelectric field‐effect transistor (FeFET) are 4.95×106, 68 mV dec−1, and 16.7 cm2 V−1 s−1, respectively. By a small electrical stimulation, the device demonstrates remarkable non‐volatile memory properties, including robust long‐term retention of ≈3000 s, superior endurance over 34 000 cycles, low operating energy at ≈0.3 pJ per spike. By a large electrical stress, it exhibits well memristive behavior and gating history dependent accumulation/diminution effect, which is attributed to the charge dynamic trapping/de‐trapping activation at the MoS2/BST interface. Following the historic memory behaviors, a cryptosystem is developed with auto‐generated reading log which is tamper‐resistant at hardware level. Moreover, the synaptic functions are realized on the device such as the short‐term potentiation/depression and gating‐depending synaptic plasticity. This study shows the opportunities of multi‐functionalities integration in a single FeFET device.

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Ferroelectric-Modulated MoS2 Field-Effect Transistors As Multilevel Nonvolatile Memory.

Ferroelectric-Modulated MoS 2 Field-Effect Transistors as Multilevel Nonvolatile Memory

2D Ferroelectric Metal–Organic Frameworks for Ultralow Power Field Effect Transistors

High-Performance C60 Coupled Ferroelectric Enhanced MoS2 Nonvolatile Memory.

Ferroelectric Fet for Nonvolatile Memory Application with Two-Dimensional Mose2 Channels

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

High Uniformity Ferroelectric MoS2 Nonvolatile Memory Array

Gate‐Switchable BST Ferroelectric MoS2 FETs for Non‐Volatile Digital Memory and Analog Memristor

Ferroelectric HfO 2 Memory Transistors With High- κ Interfacial Layer and Write Endurance Exceeding 10 10 Cycles

Sliding ferroelectric memories and synapses

Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

A Ferroelectric Semiconductor Field-Effect Transistor

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications