Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

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Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Phase-controllable Large-Area Two-Dimensional in 2 Se 3 and Ferroelectric Heterophase Junction

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Low-Dimensional In2Se3 Compounds: from Material Preparations to Device Applications.

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Intrinsic Ferroelectric Switching in Two-Dimension Α-In_2se_3

Recent Progress on Two-Dimensional Ferroelectrics: Material Systems and Device Applications

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor Α-In2se3 for Nonvolatile Memory

Modulation of opto-electronic properties of InSe thin layers via phase transformation

In-Plane Ferrielectric Order in van der Waals β'-In2Se3

Recent Progress in Two-Dimensional Bi2O2Se and Its Heterostructures.

Mexican-hat potential energy surface in two-dimensional III 2 -VI 3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Atomic Visualization and Switching of Ferroelectric Order in Β‐in2se3 Films at the Single Layer Limit