Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Mexican-hat potential energy surface in two-dimensional III 2 -VI 3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change

Mexican-hat Potential Energy Surface in Two-Dimensional III2-VI3 Materials and the Importance of Entropy Barrier in Ultrafast Reversible Ferroelectric Phase Change

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Prediction of intrinsic two-dimensional ferroelectrics in In 2 Se 3 and other III 2 -VI 3 van der Waals materials

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Atomic Visualization and Switching of Ferroelectric Order in Β‐in2se3 Films at the Single Layer Limit

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Ferroelectric Control of Band Alignments and Magnetic Properties in the Two-Dimensional Multiferroic VSe2/In2Se3

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

In-Plane Ferrielectric Order in van der Waals β'-In2Se3

Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Ferroelectric phase transition driven by anharmonic lattice mode coupling in two-dimensional monolayer In2Se3

Valence mediated tunable magnetism and electronic properties by ferroelectric polarization switching in 2D FeI/InSe van der Waals heterostructures.

Out-of-plane and in-plane ferroelectricity of atom-thick two-dimensional InSe

Two‐dimensional In2Se3: A Rising Advanced Material for Ferroelectric Data Storage

Valence mediated tunable magnetism and electronic properties by ferroelectric polarization switching in 2D FeI<sub>2</sub>/In<sub>2</sub>Se<sub>3</sub> van der Waals heterostructures