Abstract:Ferroelectricity has recently been demonstrated in germanium-based inorganic halide perovskites. We use atomistic first-principles-based simulations to study ultra-thin CsGeBr$_3$ films with thicknesses of 4-18 nm and develop a theory for ferroelectric ultrathin films. The theory introduces (i) a local order parameter, the local polarization, which allows the identification of phase transitions into both monodomain and polydomain phases, and (ii) a dipole pattern classifier, which allows efficient and reliable identification of unique dipole patterns. Application of the theory to both halides CsGeBr$_3$ and CsGeI$_3$, as well as oxide BiFeO$_3$ ultrathin ferroelectrics, which undergo paraelectric cubic to ferroelectric rhombohedral phase transition in bulk, reveal two distinct scenarios for ultrathin films. In the first one, the films transition into a monodomain phase, which is allowed below a critical value of the residual depolarizing field. Above this critical value, the second scenario occurs, and the film undergoes a phase transition into a nanodomain phase. The two scenarios are associated with the opposite response of Curie temperature to thickness reduction. As the film's thickness decreases, the transition temperature into the monodomain phase increases while the transition temperature into the nanodomain phase decreases. The surface effects are responsible for the Curie temperature enhancement, while the stripe domain pattern is the origin of the transition temperature suppression. Application of dipole pattern classifier reveals a rich variety of nanodomain phases in halide films: nano-stripes, labyrinths, zig-zags, pillars, and lego-domains. Our work could lead to both a deeper understanding of nanoscale ferroelectrics and discoveries of unusual nanoscale dipole patterns.

Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides

Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides

Van der Waals force-induced intralayer ferroelectric-to-antiferroelectric transition via interlayer sliding in bilayer group-IV monochalcogenides

Intrinsic High-Temperature Ferroelectricity, Superferroelasticity, and Deep-Ultraviolet Nonlinear Optical Response of GaOCl Monolayer

Ferroelectricity and Antiferroelectricity in Elemental Group-V Monolayer Materials

Interlayer Sliding-Induced Intralayer Ferroelectric Switching in Bilayer Group-IV Monochalcogenides

Phase Field Simulations of Low-Dimensional Ferroelectrics

Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Strain engineering and hydrogen effect for two-dimensional ferroelectricity in monolayer group-IV monochalcogenides MX (M = Sn, Ge; X = Se, Te, S)

The atlas of ferroicity in two-dimensional MGeX3 family: Room-temperature ferromagnetic half metals and unexpected ferroelectricity and ferroelasticity

Excitons and Electron–Hole Liquid State in 2D Γ‐phase Group‐IV Monochalcogenides

Theory of ultrathin ferroelectrics: the case of CsGeBr$_3$

First-principles study of ferroelectricity in two-dimensional Quin- layer M2CT2 MXenes

Theoretical study on two dimensional group IV-VI ternary compounds with large in-plane spontaneous polarization

Promising ferroelectricity in 2D group IV tellurides: a first-principles study

Noncollinear ferrielectricity and morphotropic phase boundary in monolayer GeS

Noncollinear ferrielectricity and morphotropic phase boundary in GeS monolayer

Experimental formation of monolayer group-IV monochalcogenides

Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers

Giant piezoelectricity in group IV monochalcogenides with ferroelectric AA layer stacking