Abstract:We performed density functional theory calculations with self-consistent van der Waals corrected exchange-correlation (XC) functionals to capture the structure of black phosphorus and twelve monochalcogenide monolayers and find the following results: (a) The in-plane unit cell changes its area in going from the bulk to a monolayer. The change of in-plane distances implies that bonds weaker than covalent or ionic ones are at work within the monolayers themselves. This observation is relevant for the prediction of the critical temperature $T_c$. (b) There is a hierarchy of independent parameters that uniquely define a ground state ferroelectric unit cell (and square and rectangular paraelectric unit cells as well): only 5 optimizable parameters are needed to establish the unit cell vectors and the four basis vectors of the ferroelectric ground state unit cell, while square and rectangular paraelectric structures are defined by only 3 or 2 independent optimizable variables, respectively. (c) The reduced number of independent structural variables correlates with larger elastic energy barriers on a rectangular paraelectric unit cell when compared to the elastic energy barrier of a square paraelectric structure. This implies that $T_c$ obtained on a structure that keeps the lattice parameters fixed (for example, using an NVT ensemble) should be larger than the transition temperature on a structure that is allowed to change in-plane lattice vectors (for example, using the NPT ensemble). (d) The dissociation energy (bulk cleavage energy) of these materials is similar to the energy required to exfoliate graphite and MoS$_2$. (e) There exists a linear relation among the square paraelectric unit cell lattice parameter and the lattice parameters of the rectangular ferroelectric ground state unit cell. These results highlight the subtle atomistic structure of these novel 2D ferroelectrics.

Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers

Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides

Tuning energy barriers by doping 2D group-IV monochalcogenides

Group-IV monochalcogenide monolayers: two-dimensional ferroelectrics with weak intra-layer bonds and a phosphorene-like monolayer dissociation energy

Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides

Interlayer Sliding Induced Intralayer Ferroelectric-Antiferroelectric Transition in Bilayer Group-IV Monochalcogenides

Phase Transition of Two-Dimensional Ferroelectric and Paraelectric Ga2O3 Monolayer: A Density Functional Theory and Machine-Learning Study

Enabling Room-Temperature Triferroic Coupling in Dual Transition-Metal Dichalcogenide Monolayers Via Electronic Asymmetry

Size-dependent ferroelectric-to-paraelectric sliding transformations and antipolar-to-ferroelectric topological phase transitions in binary homobilayers

Two-Dimensional Multiferroics: Ferroelasticity, Ferroelectricity, Domain Wall, and Potential Mechano-Opto-Electronic Applications

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Tuning metal/superconductor to insulator/superconductor coupling via control of proximity enhancement between NbSe2monolayers

Normal-to-topological insulator martensitic phase transition in group-IV monochalcogenides driven by light

Faraday rotation and transmittance as markers of topological phase transitions in 2D materials

Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators

Terahertz optics-driven phase transition in two-dimensional multiferroics

Tuning metal/superconductor to insulator/superconductor coupling via control of proximity enhancement between NbSe$_2$ monolayers

Revisiting Intercalation‐Induced Phase Transitions in 2D Group VI Transition Metal Dichalcogenides

Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications

Pressure-Modulated Structural and Magnetic Phase Transitions in Two-Dimensional FeTe: Tetragonal and Hexagonal Polymorphs

Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism