Emergent ferroelectricity in subnanometer binary oxide films on silicon
Suraj S Cheema,Nirmaan Shanker,Shang-Lin Hsu,Yoonsoo Rho,Cheng-Hsiang Hsu,Vladimir A Stoica,Zhan Zhang,John W Freeland,Padraic Shafer,Costas P Grigoropoulos,Jim Ciston,Sayeef Salahuddin,Suraj S. Cheema,Vladimir A. Stoica,John W. Freeland,Costas P. Grigoropoulos
DOI: https://doi.org/10.1126/science.abm8642
IF: 56.9
2022-05-06
Science
Abstract:The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. We report on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in zirconium dioxide (ZrO 2 ) thin films on silicon. The emergent ferroelectricity and hysteretic polarization switching in ultrathin ZrO 2 , conventionally a paraelectric material, notably persists down to a film thickness of 5 angstroms, the fluorite-structure unit-cell size. This approach to exploit three-dimensional centrosymmetric materials deposited down to the two-dimensional thickness limit, particularly within this model fluorite-structure system that possesses unconventional ferroelectric size effects, offers substantial promise for electronics, demonstrated by proof-of-principle atomic-scale nonvolatile ferroelectric memory on silicon. Additionally, it is also indicative of hidden electronic phenomena that are achievable across a wide class of simple binary materials.
multidisciplinary sciences