Abstract:4D‐STEM is used to spatially resolve the complex microstructure of a multiphase polycrystalline hafnium zirconium oxide thin film. The analysis reveals site‐specific phase composition, alignment of polar axis, and phase/domain boundaries in the film, demonstrating a characterization framework for robust future investigation of the effects of growth, fabrication, and design parameters. Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and transistors due to its superior scalability and seamless integration with complementary metal‐oxide‐semiconductor processing. A major challenge in developing this emerging ferroelectric material is the metastable nature of the non‐centrosymmetric polar phase responsible for ferroelectricity, resulting in a coexistence of both polar and non‐polar phases with uneven grain sizes and random orientations. Due to the structural similarity between the multiple phases and the nanoscale dimensions of the thin film devices, accurate measurement of phase‐specific information remains challenging. Here, the application of 4D scanning transmission electron microscopy is demonstrated with automated electron diffraction pattern indexing to analyze multiphase polycrystalline HZO thin films, enabling the characterization of crystallographic phase and orientation across large working areas on the order of hundreds of nanometers. This approach offers a powerful characterization framework to produce a quantitative and statistically robust analysis of the intricate structure of HZO films by uncovering phase composition, polarization axis alignment, and unique phase distribution within the HZO film. This study introduces a novel approach for analyzing ferroelectric HZO, facilitating reliable characterization of process‐structure‐property relationships imperative to accelerating the growth optimization, performance, and successful implementation of ferroelectric HZO in devices.

3D ferroelectric phase field simulations of polycrystalline multi-phase hafnia and zirconia based ultra-thin films

3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Phase Field Simulations of Low-Dimensional Ferroelectrics

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Alternating Current Field Effects in Atomically Ferroelectric Ultrathin Films

Phase-field Simulation of Domain Evolution in Ferroelectric Thin Films with Deadlayers

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Phase Field Simulations of Ferroelectric Nanoparticles with Different Long-Range-electrostatic and -Elastic Interactions

Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

A phase field model combined with genetic algorithm for polycrystalline hafnium zirconium oxide ferroelectrics

Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO2 Thin Film

The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study

Electric-field-induced crystallization of Hf 0.5 Zr 0.5 O 2 thin film based on phase-field modeling

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Design Space for Stabilized Negative Capacitance in HfO 2 Ferroelectric-Dielectric Stacks Based on Phase Field Simulation

Ultralarge polarization in ferroelectric hafnia-based thin films

Kinetical phase transition paths and phase stability in ferroelectric HfO 2