Abstract:4D‐STEM is used to spatially resolve the complex microstructure of a multiphase polycrystalline hafnium zirconium oxide thin film. The analysis reveals site‐specific phase composition, alignment of polar axis, and phase/domain boundaries in the film, demonstrating a characterization framework for robust future investigation of the effects of growth, fabrication, and design parameters. Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and transistors due to its superior scalability and seamless integration with complementary metal‐oxide‐semiconductor processing. A major challenge in developing this emerging ferroelectric material is the metastable nature of the non‐centrosymmetric polar phase responsible for ferroelectricity, resulting in a coexistence of both polar and non‐polar phases with uneven grain sizes and random orientations. Due to the structural similarity between the multiple phases and the nanoscale dimensions of the thin film devices, accurate measurement of phase‐specific information remains challenging. Here, the application of 4D scanning transmission electron microscopy is demonstrated with automated electron diffraction pattern indexing to analyze multiphase polycrystalline HZO thin films, enabling the characterization of crystallographic phase and orientation across large working areas on the order of hundreds of nanometers. This approach offers a powerful characterization framework to produce a quantitative and statistically robust analysis of the intricate structure of HZO films by uncovering phase composition, polarization axis alignment, and unique phase distribution within the HZO film. This study introduces a novel approach for analyzing ferroelectric HZO, facilitating reliable characterization of process‐structure‐property relationships imperative to accelerating the growth optimization, performance, and successful implementation of ferroelectric HZO in devices.

A phase field model combined with genetic algorithm for polycrystalline hafnium zirconium oxide ferroelectrics

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Electric-field-induced crystallization of Hf 0.5 Zr 0.5 O 2 thin film based on phase-field modeling

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

3D ferroelectric phase field simulations of polycrystalline multi-phase hafnia and zirconia based ultra-thin films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing

Phase-field Simulation of Domain Evolution in Ferroelectric Thin Films with Deadlayers

Phase-field Simulations of Ferroelectric/ferroelastic Polarization Switching

Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation

An Efficient Space-Time Phase Field Discretization for Ferroelectrics

3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Robust Ferroelectricity in HfO2-based Bulk Crystals Via Polymorphic Engineering

A phase-field model for study of ferroelastic deformation behavior in yttria stabilized zirconia

Improving the Synaptic Behavior with Polar Orthorhombic Phase in Hf 0.5 Zr 0.5 O 2 Film

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

A General Physics Model of Oxygen Vacancy Dynamics for Ferroelectricity Enhancement and Degradation in Hafnia-Based Thin Films