Abstract:Abstract Ferroelectric memory devices are expected for low-power and high-speed memory applications. HfO 2 -based ferroelectric is attracting attention for its CMOS-compatibility and high scalability. Mesoscopic-scale grains, of which size is almost comparable to device size, are formed in HfO 2 -based ferroelectric poly-crystalline thin films, which largely influences electrical characteristics in memory devices. It is important to study the impact of mesoscopic-scale grain formation on the electrical characteristics. In this work, first, we have studied the thickness dependence of the polarization switching kinetics in HfO 2 -based ferroelectric. While static low-frequency polarization is comparable for different thickness, dynamic polarization switching speed is slower in thin Hf 0.5 Zr 0.5 O 2 (HZO) capacitors. Based on the analysis using the NLS model and physical characterization, thinner HZO contains smaller grains with orientation non-uniformity and more grain boundaries than thicker HZO, which can impede macroscopic polarization switching. We have also theoretically and experimentally studied the polar-axis alignment of a HfO 2 -based ferroelectric thin film. While in-plane polar orientation is stable in as-grown HZO, out-of-plane polarization can be dominant by applying electric field, which indicates the transition from in-plane polar to out-of-plane polar orientation in the ferroelectric phase grains. This is confirmed by calculating kinetic pathway using ab-initio calculation.

Improving the Synaptic Behavior with Polar Orthorhombic Phase in Hf 0.5 Zr 0.5 O 2 Film

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P$_r$ > 70$μ$C/cm$^2$) in Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO 2 -ZrO 2 -HfO 2 and ZrO 2 -HfO 2 -ZrO 2 Superlattice Ferroelectric Films

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

Tensile Stress Regulated Microstructures and Ferroelectric Properties of Hf0.5Zr0.5O2 Films