Abstract:Resistive random access memory (RRAM) devices are being investigated extensively for future nonvolatile memories using various transition metal oxides like NiO, ZnO, TiO 2 , and HfO 2 as the active material. Here, we have demonstrated the performance of RRAM devices using HfO 2 thin films deposited by the ion beam sputtering technique on p ++ -Si (100) substrate with varying thickness from 10 to 30 nm. The density of these films is calculated to be in the range of 9.1-8.6 g/cm 3 . A drastic change in the average grain size from ∼90 to ∼2000 nm is noticed when the thickness is increased from 20 to 30 nm. We observe a structural transformation from orthorhombic to a dominant monoclinic phase with an increase in thickness from 20 to 30 nm, although a small fraction of the orthorhombic phase remains present in the later film. The phase transformation is accompanied by a significant increase in the average grain size along with a decrease in the oxygen vacancy, as observed from X-ray photoelectron spectroscopy. Further, a red shift in the absorption peak and a reduced band gap of HfO 2 film having 30 nm thickness well corroborates with the above fact. We examine the bipolar forming-free resistive switching performance of the RRAM devices fabricated using these films by measuring 100 I–V cycles. Among all films, the film of 20 nm thickness shows better switching behavior with an ON/OFF ratio of ∼7 attributed to the appropriate grain size, enhanced crystallization, and oxygen vacancies. The endurance and retention measurements show the excellent reliability of the 20 nm thick device. Schematically, the switching mechanism has been discussed based on the Ohmic and Poole-Frenkel conduction models, which is attributed to the formation and rupture of conductive filaments consisting of oxygen vacancies.

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Antiferroelectric Phase Evolution in HfxZr1-xO2 Thin Film Toward High Endurance of Non-Volatile Memory Devices

HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM

Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films

Intrinsic Instability of Rhombohedral (Hf, Zr)O2 Phases and Endurance Crisis of Hf-based Ferroelectric Devices

Morphotropic Phase Boundary of Hf1- xZr xO2 Thin Films for Dynamic Random Access Memories

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

Correlation Between Crystal Phase Composition, Wake-Up Effect, and Endurance Performance in Ferroelectric HfxZr1-xO2 Thin Films

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf 0.5 Zr 0.5 O 2 by Optimizing TiN x Interfacial Capping Layer and Its Fatigue Mechanism

Optimization of Ferroelectricity and Endurance of Hafnium Zirconium Oxide Thin Films by Controlling Element Inhomogeneity

Thickness dependent phase transformation and resistive switching performance of HfO 2 thin films

Robust Breakdown Reliability and Improved Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Using Grain Boundary Interruption

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(&gt; 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications