Abstract:Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on the stability of the multiple memory states in the HfO2−based FeFETs. Here we firstly report the write/read disturb effects on the multiple memory states in the Hf0.5Zr0.5O2 (HZO)−based FeFETs. The multiple memory states in HZO−based FeFETs do not show obvious degradation with the write and read disturb cycles. Moreover, the retention characteristics of the intermediate memory states in HZO−based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric polarization. Through the deep analysis of the operation principle of in HZO−based FeFETs, we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization shielding. The experimental and theoretical evidences confirm that the long−term stability of the intermediate memory states in HZO−based FeFETs are as robust as that of the saturated memory state, laying a solid foundation for their practical applications.

High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

A 9mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

A 9-Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7-Ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

HfO2-ZrO2 Superlattice Ferroelectric Capacitor with Improved Endurance Performance and Higher Fatigue Recovery Capability

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

HfO 2 -ZrO 2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance