Abstract:Ferroelectric field effect transistor (FeFET) memories with hafnium zirconium oxide (HZO) ferroelectric gate dielectric and ultrathin InO (x) channel exhibit promising applicability in monolithic three-dimensional (M3D) integrated chips. However, the inferior stability of the devices severely limits their applications. In this work, we studied the effect of single cycle of atomic-layer-deposited Al-O bonds repeatedly embedded into an ultrathin InO (x) channel (similar to 2.8 nm) on the Hf0.45Zr0.55O (x) FeFET memory performance. Compared to the pure InO (x) channel, three cycles of Al-O bonds modified InO (x) channel (IAO-3) generates a much larger memory window (i.e. drain current ratio between the programmed and erased devices) under the same program conditions (+5.5 V/500 ns), especially after post-annealing at 325 degrees C for 180 s in O-2 (1238 versus 317). Meanwhile, the annealed IAO-3 FeFET memory also shows quite stable data retention up to 10(4) s, and much more robust program/erase stabilities till 10(5) cycles. This is because the modification of strong Al-O bonds stabilizes the oxygen vacancies and reduces the bulk trap density in the channel. Furthermore, it is indicated that the program and erase efficiencies increase gradually with reducing the channel length of the memory device. By demonstrating markedly improved performance of the HZO FeFET memory with the ultrathin IAO-3 channel, this work provides a promising device for M3D integratable logic and memory convergent systems.

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements.

First Demonstration of Annealing-Free Top Gate La:HZO-IGZO FeFET with Record Memory Window and Endurance

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM

First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Performance Improvement of Hf0.45Zr0.55O X Ferroelectric Field Effect Transistor Memory with Ultrathin Al-O Bonds-Modified InO X Channels

Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO x at Hf 0.5 Zr 0.5 O 2 /SiO x Interface to Suppress Oxygen Vacancy Generation

Endurance Improvement of HfO $_{\text{2}}$ -Based FeFETs on FDSOI Platform by Al $_{\text{2}}$ O $_{\text{3}}$ Insertion Layer and Leakage-Awareness Recover (LAR) Strategies

Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO X at Hf0.5Zr0.5O2/SiO X Interface to Suppress Oxygen Vacancy Generation

A Novel High-Endurance FeFET Memory Device Based on ZrO 2 Anti-Ferroelectric and IGZO Channel

Antiferroelectric Phase Evolution in HfxZr1-xO2 Thin Film Toward High Endurance of Non-Volatile Memory Devices

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Ferroelectric and Interlayer Co-optimization with In-depth Analysis for High Endurance FeFET

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer