Abstract:We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the ferroelectric layer. The HZO/beta-Ga2O3 Fe-FinFETs have wider counterclockwise hysteresis loops in the transfer characteristics than that of conventional planar FET, achieving record-high memory window (MW) of 13.9 V in a single HZO layer. When normalized to the actual channel width, FinFETs show an improved ION/IOFF ratio of 2.3x10^7 and a subthreshold swing value of 110 mV/dec. The enhanced characteristics are attributed to the low-interface state density (Dit), showing good interface properties between the beta-Ga2O3 and HZO layer. The enhanced polarization due to larger electric fields across the entire ferroelectric layer in FinFETs is validated using Sentaurus TCAD. After 5x10^6 program/erase (PGM/ERS) cycles, the MW was maintained at 9.2 V, and the retention time was measured up to 3x10^4 s with low degradation. Therefore, the ultrawide bandgap (UWBG) Fe-FinFET was shown to be one of the promising candidates for high-density non-volatile memory devices.

What problem does this paper attempt to address?

The main problem this paper attempts to address is the development of a novel ferroelectric fin field-effect transistor (Fe-FinFET) to achieve a wider memory window and higher performance, thereby meeting the demands of high-density non-volatile memory devices. Specifically, the paper demonstrates the excellent performance of this new Fe-FinFET by using β-Gallium Oxide (β-Ga₂O₃) as the semiconductor material and introducing Hafnium Zirconium Oxide (HZO) as the ferroelectric layer in the gate stack. ### Main Issues: 1. **Increasing Memory Window**: Traditional planar FETs have limitations in memory window. This paper achieves a record-breaking memory window of 13.9 V by using a combination of β-Ga₂O₃ and HZO, which is 4.2 times higher than the memory window of traditional planar FETs (3.3 V). 2. **Enhancing Electrical Performance**: The FinFET structure improves the device's on/off current ratio (ION/IOFF), subthreshold swing (SS), and low interface state density (Dit), which are crucial performance metrics for high-performance memory devices. 3. **Reliability Verification**: The paper verifies the performance of this new Fe-FinFET in terms of data retention time and endurance, ensuring its reliability and stability in practical applications. ### Solutions: - **Material Selection**: Using β-Ga₂O₃ as the semiconductor material leverages its ultra-wide bandgap (UWBG) properties to improve the device's breakdown field and high-temperature stability. - **Ferroelectric Layer Design**: HZO ferroelectric layer is prepared using atomic layer deposition (ALD) technology to ensure good interface characteristics with β-Ga₂O₃. - **FinFET Structure**: The FinFET structure enhances gate control capability and increases electric field strength, thereby achieving a wider memory window and better electrical performance. ### Experimental Results: - **Memory Window**: Achieved a record-high memory window of 13.9 V. - **Electrical Performance**: ION/IOFF ratio reached 2.3×10⁷, and the subthreshold swing was 110 mV/dec. - **Reliability**: After 5×10⁶ program/erase cycles, the memory window remained at 9.2 V, and the data retention time reached 3×10⁴ seconds. In summary, through innovative material selection and structural design, this paper successfully develops a high-performance ferroelectric FinFET, providing new possibilities for future high-density non-volatile memory applications.

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