Abstract:Metal-ferroelectric-metal (MFM) capacitors on flexible substrates are promising for flexible nonvolatile memory applications, while the insufficient scalability of perovskite-based ferroelectric thin films and the difficulty of direct integration of high performance ferroelectric thin films on current conventional flexible substrates are the most serious obstacles to their practical applications. Meanwhile, performance under harsh conditions (such as high temperature and high total ionized dose (TID) radiation) is highly demanded due to the growing applications for nonvolatile memory. Here, we integrate highly scalable ferroelectric Hf0.5Zr0.5O2 (HZO) thin films on potential flexible mica substrates using atomic layer deposition (ALD) to form flexible MFM capacitors and investigate the ferroelectric properties, the retention behaviors, and endurance characteristics of the TaN/HZO/TaN/mica flexible MFM capacitors under various tensile and compressive bending radii. In addition, these characteristics of the HZO-based MFM flexible capacitors are explored in a wide temperature range from 25 up to 125 degrees C. The ferroelectricity of the film can be retained under a bending radius down to 7.5 mm after 1000 bending cycles, and the retention properties can be reserved under a bake time of 10(4) s at 125 degrees C, with an extrapolated retention time-to-failure longer than 10 years. Furthermore, the flexible devices display robust ferroelectric performance against radiation of Co-60 gamma-rays with a total dose of 1 Mrad (Si). Our work represents a critical step in HfO2-based ferroelectric memory implemented on mica toward flexible nonvolatile memory operated under harsh conditions.

Hf0.5Zr0.5O2-Based Ferroelectric Field-Effect Transistors With HfO2 Seed Layers for Radiation-Hard Nonvolatile Memory Applications

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO 2 -Based Ferroelectric Field-Effect Transistors

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements.

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors with ZrO2 Seed Layers

Performance Improvement of Hf0.5Zr0.5O2 Based Ferroelectric-Field-Effect Transistors with ZrO2 seed layers

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

Integration and Electrical Properties of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Film on Bulk $\beta$ -Ga 2 O 3 (−201) Substrate for Memory Applications

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Ferroelectric HfO 2 Memory Transistors With High- κ Interfacial Layer and Write Endurance Exceeding 10 10 Cycles

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation

Performance Improvement of Hf0.45Zr0.55O X Ferroelectric Field Effect Transistor Memory with Ultrathin Al-O Bonds-Modified InO X Channels

Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application