Abstract:In application scenarios such as astronautics, high-altitude aircraft, medical radiography, high-energy physics, and nuclear power plants, the irradiation resistance of electronic components is one of the basic requirements for their reliability. HfO 2 -based ferroelectric films have the advantages of high CMOS process compatibility, good miniaturizability, low operating voltage, and excellent irradiation resistance, which are the core materials for the new generation of irradiation resistance ferroelectric memories. In this paper, two kinds of metal-electrode ferroelectric capacitors, W/Hf 0.5 Zr 0.5 O 2 /W (WW) and Pt/Hf 0.5 Zr 0.5 O 2 /Pt (PP), have been prepared, and three gradient ő≥-irradiation experiments have been carried out on the two kinds of ferroelectric capacitors. The effect of metal electrodes on the irradiation resistance of Hf 0.5 Zr 0.5 O 2 ferroelectric thin films was carefully investigated by comparing and analyzing the statistical laws of polarization change and rectangularity change before and after irradiation of a large number of devices. The experimental results show that the WW devices have better irradiation resistance than PP devices, and we further explain the irradiation resistance mechanism by first-principle calculations and finite element analysis to verify the credibility of the experimental results. Finally, we conducted a comparative test of the fatigue and wake-up characteristics of the WW devices before and after irradiation, and the results show that the prepared W/Hf 0.5 Zr 0.5 O 2 /W devices can withstand very high total ő≥-dose radiation, reaching up to 13.86¬†Mrad(Si), and they are very suitable for the application of irradiation resistant electronics.

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